丝印：023N04NS；Package：PG-TO263-3；StrongIRFETTM2 Power-Transistor

Features • Optimized for wide range of applications • N-channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.05064 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：023N04NS；Package：PG-TO252-3；StrongIRFETTM2 Power-Transistor

Features • Optimized for wide range of applications • N-channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.0017 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：023N04NG；Package：PDFNWB5X6-8L；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description T he TF023N04NG uses advanced trench technology and design to provide excellent RDS(ON) withlowgate charge. It can be used in a wide variety ofapplications. ● Features Advance device constructure Low RDS(ON) to minimize conduction loss Low Gate Charge for fast switchin

文件：4.35827 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体

New OptiMOS??40V and 60V

文件：1.02174 Mbytes 页数：2 Pages

Infineon

英飞凌

N-Channel MOSFET Transistor

文件：338.92 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：244.13 Kbytes 页数：2 Pages

ISC

无锡固电