丝印：019N08NS；Package：PG-TO263-3；StrongIRFETTM 2 Power-Transistor

Features • Optimized for a wide range of applications • N-Channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：948.95 Kbytes 页数：11 Pages

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丝印：019N08NS；Package：PG-TO220-3；StrongIRFETTM2Power-Transistor

Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

文件：1.04173 Mbytes 页数：11 Pages

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丝印：019N08N5；Package：PG-HSOF-8；OptiMOSTM 5 Power-Transistor, 80 V

Features • Ideal for high frequency switching and sync. rec. • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：679.93 Kbytes 页数：11 Pages

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丝印：019N08NS；Package：PG-TSON-8-3；MOSFET OptiMOSTM5 Power-Transistor, 80 V

文件：964.17 Kbytes 页数：11 Pages

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丝印：019N08N5；Package：PG-TO263-7；OptiMOS짧 5 Power-Transistor, 80 V

文件：1.07842 Mbytes 页数：11 Pages

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丝印：019N08NS；Package：PG-TO220-3；StrongIRFETTM 2 Power-Transistor

文件：1.09462 Mbytes 页数：11 Pages

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丝印：019N08NM5；Package：sTOLL；OptiMOSTM5 Power-Transistor, 80 V

文件：1.06948 Mbytes 页数：11 Pages

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