首页 >STGW60H65DFB>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
STGW60H65DFB | Trench gate field-stop 650 V, 60 A high speed HB series IGBT Description ThesedevicesareIGBTsdevelopedusinganadvancedproprietarytrenchgatefieldstop structure.ThesedevicesarepartofthenewHBseriesofIGBTs,which representanoptimumcompromisebetweenconductionandswitchinglossto maximizetheefficiencyofanyfrequencyconverter. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | |
STGW60H65DFB | Low thermal resistance | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | |
STGW60H65DFB | 包装：卷带（TR） 封装/外壳：TO-247-3 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 650V 80A 375W TO-247 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | |
Trench gate field-stop 650 V, 60 A high speed HB series IGBT Description ThesedevicesareIGBTsdevelopedusinganadvancedproprietarytrenchgatefieldstop structure.ThesedevicesarepartofthenewHBseriesofIGBTs,which representanoptimumcompromisebetweenconductionandswitchinglossto maximizetheefficiencyofanyfrequencyconverter. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
Trench gate field-stop 650 V, 60 A high speed HB series IGBT Features •Maximumjunctiontemperature:TJ=175°C •Excellentswitchingperformancethankstotheextradrivingkelvinpin •LowVCE(sat)=1.6V(typ.)@IC=60A •Minimizedtailcurrent •Tightparameterdistribution •Safeparalleling •Lowthermalresistance •Veryfastsoftrecov | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
包装：卷带（TR） 封装/外壳：TO-247-4 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
Trenchgatefield-stop650V,60AhighspeedHBseriesIGBT Description ThesedevicesareIGBTsdevelopedusinganadvancedproprietarytrenchgatefieldstop structure.ThesedevicesarepartofthenewHBseriesofIGBTs,which representanoptimumcompromisebetweenconductionandswitchinglossto maximizetheefficiencyofanyfrequencyconverter. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
60A,650VfieldstoptrenchgateIGBTwithveryfastdiode | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
60A,650VfieldstoptrenchgateIGBTwithUltrafastdiode | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
60A,650VfieldstoptrenchgateIGBT | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
60A,650VfieldstoptrenchgateIGBT Features ■Highspeedswitching ■Tightparameterdistribution ■Safeparalleling ■Lowthermalresistance ■6μsshort-circuitwithstandtime ■Leadfreepackage Applications ■Photovoltaicinverters ■Uninterruptiblepowersupply ■Welding ■Powerfactorcorrection ■Highswitching | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
Lowthermalresistance | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
Trenchgatefield-stop650V,60AhighspeedHBseriesIGBT Description ThesedevicesareIGBTsdevelopedusinganadvancedproprietarytrenchgatefieldstop structure.ThesedevicesarepartofthenewHBseriesofIGBTs,which representanoptimumcompromisebetweenconductionandswitchinglossto maximizetheefficiencyofanyfrequencyconverter. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
Lowthermalresistance | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
Lowthermalresistance | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
Trenchgatefield-stop650V,60AhighspeedHBseriesIGBT Description ThesedevicesareIGBTsdevelopedusinganadvancedproprietarytrenchgatefieldstop structure.ThesedevicesarepartofthenewHBseriesofIGBTs,which representanoptimumcompromisebetweenconductionandswitchinglossto maximizetheefficiencyofanyfrequencyconverter. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
60A,650VfieldstoptrenchgateIGBT Features ■Highspeedswitching ■Tightparameterdistribution ■Safeparalleling ■Lowthermalresistance ■6μsshort-circuitwithstandtime ■Leadfreepackage Applications ■Photovoltaicinverters ■Uninterruptiblepowersupply ■Welding ■Powerfactorcorrection ■Highswitching | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
Lowthermalresistance | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS |
产品属性
- 产品编号：
STGW60H65DFB
- 制造商：
STMicroelectronics
- 类别：
分立半导体产品 > 晶体管 - UGBT、MOSFET - 单
- 包装：
卷带（TR）
- IGBT 类型：
沟槽型场截止
- 不同 Vge、Ic 时 Vce(on)（最大值）：
2V @ 15V，60A
- 开关能量：
1.09mJ（开），626µJ（关）
- 输入类型：
标准
- 25°C 时 Td（开/关）值：
51ns/160ns
- 测试条件：
400V，60A，5 欧姆，15V
- 工作温度：
-55°C ~ 175°C（TJ）
- 安装类型：
通孔
- 封装/外壳：
TO-247-3
- 供应商器件封装：
TO-247
- 描述：
IGBT 650V 80A 375W TO-247
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
22+23+ |
N/A |
3000 |
找假货请绕道 |
询价 | ||
ST(意法半导体) |
23+ |
TO-247AD |
1330 |
原厂订货渠道,支持BOM配单一站式服务 |
询价 | ||
STMicroelectronics |
24+ |
TO-247-3 |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
ST |
2020+ |
TO247 |
90000 |
原装现货/假一罚十/可开增票 |
询价 | ||
ST/意法 |
22+ |
TO-247 |
15915680 |
原厂原装现货 |
询价 | ||
ST |
新年份 |
TO247-3 |
27995 |
优势价格原装现货提供BOM一站式配单服务 |
询价 | ||
ST |
21+ |
TO-247 |
3600 |
全新原装公司现货
|
询价 | ||
INFINEON/英飞凌 |
21+ |
NA |
28000 |
询价 | |||
ST |
16+ |
TO247-3 |
40 |
全新原装,价格优势 |
询价 | ||
ST |
2339+ |
IGBT |
32280 |
原装现货 假一罚十!十年信誉只做原装! |
询价 |
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