Description

These devices are IGBTs developed using an advanced proprietary trench gate fieldstop

structure. These devices are part of the new HB series of IGBTs, which

represent an optimum compromise between conduction and switching loss to

maximize the efficiency of any frequency converter. Furthermore, the slightly positive

VCE(sat) temperature coefficient and very tight parameter distribution result in safer

paralleling operation.

Features

• Maximum junction temperature: TJ = 175 °C

• High speed switching series

• Minimized tail current

• Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 60 A

• Tight parameter distribution

• Safe paralleling

• Positive VCE(sat) temperature coefficient

• Low thermal resistance

• Very fast soft recovery antiparallel diode

Applications

• Photovoltaic inverters

• High-frequency converters

STGW60H65DFB属于分立半导体产品 > 晶体管 - UGBT、MOSFET - 单。意法半导体（ST）集团制造生产的STGW60H65DFB晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。