Features

■ High speed switching

■ Tight parameter distribution

■ Safe paralleling

■ Low thermal resistance

■ 6 μs short-circuit withstand time

■ Lead free package

Applications

■ Photovoltaic inverters

■ Uninterruptible power supply

■ Welding

■ Power factor correction

■ High switching frequency converters

Description

Using advanced proprietary trench gate and field

stop structure, this IGBT leads to an optimized

compromise between conduction and switching

losses maximizing the efficiency for high

switching frequency converters. Furthermore, a

slightly positive VCE(sat) temperature coefficient

and a very tight parameter distribution result in an

easier paralleling operation.

STGWT60H65F属于分立半导体产品 > 晶体管 - UGBT、MOSFET - 单。意法半导体（ST）集团制造生产的STGWT60H65F晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。