首页 >STGF7NC60HD>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
STGF7NC60HD | N-CHANNEL 14A - 600V - TO-220/TO-220FP/DPAK Very Fast PowerMESH IGBT GeneralFeatures ■LOWERON-VOLTAGEDROP(Vcesat) ■OFFLOSSESINCLUDETAILCURRENT ■LOSSESINCLUDEDIODERECOVERY ENERGY ■LOWERCRES/CIESRATIO ■HIGHFREQUENCYOPERATIONUPTO70 KHz ■VERYSOFTULTRAFASTRECOVERYANTI PARALLELDIODE ■NEWGENERATIONPRODUCTSWITH TIGHTERPARAMETER | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | |
STGF7NC60HD | N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode Description ThesedevicesareveryfastIGBTdeveloped usingadvancedPowerMESH™technology.This processguaranteesanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior.Thesedevicesarewell-suitedfor resonantorsoft-switchingapplications. Features ■Lowo | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | |
STGF7NC60HD | 包装:卷带(TR) 封装/外壳:TO-220-3 整包 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 600V 10A 25W TO220FP | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | |
N-channel14A,600V,veryfastIGBTwithUltrafastdiode Description ThesedevicesareveryfastIGBTdeveloped usingadvancedPowerMESH™technology.This processguaranteesanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior.Thesedevicesarewell-suitedfor resonantorsoft-switchingapplications. Features ■Lowo | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
N-channel14A,600V,veryfastIGBTwithUltrafastdiode Description ThesedevicesareveryfastIGBTdeveloped usingadvancedPowerMESH™technology.This processguaranteesanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior.Thesedevicesarewell-suitedfor resonantorsoft-switchingapplications. Features ■Lowo | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
N-channelPowerMESH™600V,14AveryfastIGBT Description ThisdeviceisaveryfastIGBTdevelopedusing advancedPowerMESH™technology.This processguaranteesanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior.Thisdeviceiswell-suitedforresonant orsoft-switchingapplications. Features Lowon-vo | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
N-channel14A,600V,veryfastIGBTwithUltrafastdiode Description ThesedevicesareveryfastIGBTdeveloped usingadvancedPowerMESH™technology.This processguaranteesanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior.Thesedevicesarewell-suitedfor resonantorsoft-switchingapplications. Features ■Lowo | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
N-channel14A,600V,veryfastIGBTwithUltrafastdiode Description ThesedevicesareveryfastIGBTdeveloped usingadvancedPowerMESH™technology.This processguaranteesanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior.Thesedevicesarewell-suitedfor resonantorsoft-switchingapplications. Features ■Lowo | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
N-CHANNEL14A-600V-TO-220/TO-220FP/DPAKVeryFastPowerMESHIGBT GeneralFeatures ■LOWERON-VOLTAGEDROP(Vcesat) ■OFFLOSSESINCLUDETAILCURRENT ■LOSSESINCLUDEDIODERECOVERY ENERGY ■LOWERCRES/CIESRATIO ■HIGHFREQUENCYOPERATIONUPTO70 KHz ■VERYSOFTULTRAFASTRECOVERYANTI PARALLELDIODE ■NEWGENERATIONPRODUCTSWITH TIGHTERPARAMETER | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
N-CHANNEL14A-600VTO-220/DPAKVeryFastPowerMESHIGBT | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
N-CHANNEL14A-600VTO-220/DPAKVeryFastPowerMESHIGBT | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
N-channelPowerMESH™600V,14AveryfastIGBT Description ThisdeviceisaveryfastIGBTdevelopedusing advancedPowerMESH™technology.This processguaranteesanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior.Thisdeviceiswell-suitedforresonant orsoft-switchingapplications. Features Lowon-vo | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
N-channel14A,600V,veryfastIGBTwithUltrafastdiode Description ThesedevicesareveryfastIGBTdeveloped usingadvancedPowerMESH™technology.This processguaranteesanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior.Thesedevicesarewell-suitedfor resonantorsoft-switchingapplications. Features ■Lowo | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
N-CHANNEL14A-600V-TO-220/TO-220FP/DPAKVeryFastPowerMESHIGBT GeneralFeatures ■LOWERON-VOLTAGEDROP(Vcesat) ■OFFLOSSESINCLUDETAILCURRENT ■LOSSESINCLUDEDIODERECOVERY ENERGY ■LOWERCRES/CIESRATIO ■HIGHFREQUENCYOPERATIONUPTO70 KHz ■VERYSOFTULTRAFASTRECOVERYANTI PARALLELDIODE ■NEWGENERATIONPRODUCTSWITH TIGHTERPARAMETER | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
Advancedplanarprocess | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | TSC |
产品属性
- 产品编号:
STGF7NC60HD
- 制造商:
STMicroelectronics
- 类别:
分立半导体产品 > 晶体管 - UGBT、MOSFET - 单
- 系列:
PowerMESH™
- 包装:
卷带(TR)
- 不同 Vge、Ic 时 Vce(on)(最大值):
2.5V @ 15V,7A
- 开关能量:
95µJ(开),115µJ(关)
- 输入类型:
标准
- 25°C 时 Td(开/关)值:
18.5ns/72ns
- 测试条件:
390V,7A,10 欧姆,15V
- 工作温度:
-55°C ~ 150°C(TJ)
- 安装类型:
通孔
- 封装/外壳:
TO-220-3 整包
- 供应商器件封装:
TO-220FP
- 描述:
IGBT 600V 10A 25W TO220FP
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST(意法半导体) |
23+ |
TO-220F |
1612 |
原厂订货渠道,支持BOM配单一站式服务 |
询价 | ||
ST |
16+/17+ |
TO220F |
3500 |
原装正品现货供应56 |
询价 | ||
ST |
2021+ |
23+ |
16500 |
代理授权直销,原装现货,假一罚十,长期稳定供应,特 |
询价 | ||
STM |
21+ |
TO-220FP |
2850 |
原装正品 有挂有货 |
询价 | ||
STM |
11+ |
2850 |
TO-220FP |
询价 | |||
ST |
19+/20+ |
TO-220F |
11158 |
询价 | |||
ST/意法 |
2021+ |
TO220F |
9000 |
原装现货,随时欢迎询价 |
询价 | ||
ST |
新批次 |
TO-220F |
3000 |
询价 | |||
ST |
1318+ |
SOP20 |
23568 |
优势现货可17%税 |
询价 | ||
ST |
11+ |
TO220 |
4200 |
原装现货价格有优势量多可发货 |
询价 |
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