General Features

■ LOWER ON-VOLTAGE DROP (Vcesat)

■ OFF LOSSES INCLUDE TAIL CURRENT

■ LOSSES INCLUDE DIODE RECOVERY

ENERGY

■ LOWER CRES/CIES RATIO

■ HIGH FREQUENCY OPERATION UP TO 70

KHz

■ VERY SOFT ULTRA FAST RECOVERY ANTI

PARALLEL DIODE

■ NEW GENERATION PRODUCTS WITH

TIGHTER PARAMETER DISTRIBUTION

DESCRIPTION

Using the latest high voltage technology based on

a patented strip layout, STMicroelectronics has

designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances.

The suffix H identifies a family optimized for high

frequency applications in order to achieve very

high switching performances (reduced tfall) mantaining a low voltage drop.

APPLICATIONS

■ HIGH FREQUENCY INVERTERS

■ SMPS AND PFC IN BOTH HARD SWITCH

AND RESONANT TOPOLOGIES

■ MOTOR DRIVERS

STGP7NC60HD属于分立半导体产品 > 晶体管 - UGBT、MOSFET - 单。意法半导体（ST）集团制造生产的STGP7NC60HD晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。