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STGP7NC60H

N-channel PowerMESH™ 600 V, 14 A very fast IGBT

Description ThisdeviceisaveryfastIGBTdevelopedusing advancedPowerMESH™technology.This processguaranteesanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior.Thisdeviceiswell-suitedforresonant orsoft-switchingapplications. Features Lowon-vo

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STGP7NC60H

N-CHANNEL 14A - 600V TO-220/DPAK Very Fast PowerMESH IGBT

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STGP7NC60H

包装:卷带(TR) 封装/外壳:TO-220-3 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 600V 25A 80W TO220

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STGP7NC60H_V01

N-channel PowerMESH™ 600 V, 14 A very fast IGBT

Description ThisdeviceisaveryfastIGBTdevelopedusing advancedPowerMESH™technology.This processguaranteesanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior.Thisdeviceiswell-suitedforresonant orsoft-switchingapplications. Features Lowon-vo

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STGP7NC60HD

N-CHANNEL 14A - 600V - TO-220/TO-220FP/DPAK Very Fast PowerMESH IGBT

GeneralFeatures ■LOWERON-VOLTAGEDROP(Vcesat) ■OFFLOSSESINCLUDETAILCURRENT ■LOSSESINCLUDEDIODERECOVERY ENERGY ■LOWERCRES/CIESRATIO ■HIGHFREQUENCYOPERATIONUPTO70 KHz ■VERYSOFTULTRAFASTRECOVERYANTI PARALLELDIODE ■NEWGENERATIONPRODUCTSWITH TIGHTERPARAMETER

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STGP7NC60HD

N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode

Description ThesedevicesareveryfastIGBTdeveloped usingadvancedPowerMESH™technology.This processguaranteesanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior.Thesedevicesarewell-suitedfor resonantorsoft-switchingapplications. Features ■Lowo

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STGP7NC60HD

包装:管件 封装/外壳:TO-220-3 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 600V 25A 80W TO220

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

GB7NC60HD

N-channel14A,600V,veryfastIGBTwithUltrafastdiode

Description ThesedevicesareveryfastIGBTdeveloped usingadvancedPowerMESH™technology.This processguaranteesanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior.Thesedevicesarewell-suitedfor resonantorsoft-switchingapplications. Features ■Lowo

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

GF7NC60HD

N-channel14A,600V,veryfastIGBTwithUltrafastdiode

Description ThesedevicesareveryfastIGBTdeveloped usingadvancedPowerMESH™technology.This processguaranteesanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior.Thesedevicesarewell-suitedfor resonantorsoft-switchingapplications. Features ■Lowo

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

GP7NC60H

N-channelPowerMESH™600V,14AveryfastIGBT

Description ThisdeviceisaveryfastIGBTdevelopedusing advancedPowerMESH™technology.This processguaranteesanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior.Thisdeviceiswell-suitedforresonant orsoft-switchingapplications. Features Lowon-vo

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

GP7NC60HD

N-channel14A,600V,veryfastIGBTwithUltrafastdiode

Description ThesedevicesareveryfastIGBTdeveloped usingadvancedPowerMESH™technology.This processguaranteesanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior.Thesedevicesarewell-suitedfor resonantorsoft-switchingapplications. Features ■Lowo

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STGB7NC60HD

N-channel14A,600V,veryfastIGBTwithUltrafastdiode

Description ThesedevicesareveryfastIGBTdeveloped usingadvancedPowerMESH™technology.This processguaranteesanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior.Thesedevicesarewell-suitedfor resonantorsoft-switchingapplications. Features ■Lowo

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STGB7NC60HD

N-CHANNEL14A-600V-TO-220/TO-220FP/DPAKVeryFastPowerMESHIGBT

GeneralFeatures ■LOWERON-VOLTAGEDROP(Vcesat) ■OFFLOSSESINCLUDETAILCURRENT ■LOSSESINCLUDEDIODERECOVERY ENERGY ■LOWERCRES/CIESRATIO ■HIGHFREQUENCYOPERATIONUPTO70 KHz ■VERYSOFTULTRAFASTRECOVERYANTI PARALLELDIODE ■NEWGENERATIONPRODUCTSWITH TIGHTERPARAMETER

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STGD7NC60H

N-CHANNEL14A-600VTO-220/DPAKVeryFastPowerMESHIGBT

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STGF7NC60HD

N-channel14A,600V,veryfastIGBTwithUltrafastdiode

Description ThesedevicesareveryfastIGBTdeveloped usingadvancedPowerMESH™technology.This processguaranteesanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior.Thesedevicesarewell-suitedfor resonantorsoft-switchingapplications. Features ■Lowo

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STGF7NC60HD

N-CHANNEL14A-600V-TO-220/TO-220FP/DPAKVeryFastPowerMESHIGBT

GeneralFeatures ■LOWERON-VOLTAGEDROP(Vcesat) ■OFFLOSSESINCLUDETAILCURRENT ■LOSSESINCLUDEDIODERECOVERY ENERGY ■LOWERCRES/CIESRATIO ■HIGHFREQUENCYOPERATIONUPTO70 KHz ■VERYSOFTULTRAFASTRECOVERYANTI PARALLELDIODE ■NEWGENERATIONPRODUCTSWITH TIGHTERPARAMETER

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

TSM7NC60CF

Advancedplanarprocess

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

产品属性

  • 产品编号:

    STGP7NC60H

  • 制造商:

    STMicroelectronics

  • 类别:

    分立半导体产品 > 晶体管 - UGBT、MOSFET - 单

  • 系列:

    PowerMESH™

  • 包装:

    卷带(TR)

  • 不同 Vge、Ic 时 Vce(on)(最大值):

    2.5V @ 15V,7A

  • 开关能量:

    95µJ(开),115µJ(关)

  • 输入类型:

    标准

  • 25°C 时 Td(开/关)值:

    18.5ns/72ns

  • 测试条件:

    390V,7A,10 欧姆,15V

  • 工作温度:

    -55°C ~ 150°C(TJ)

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-220-3

  • 供应商器件封装:

    TO-220

  • 描述:

    IGBT 600V 25A 80W TO220

供应商型号品牌批号封装库存备注价格
ST
07+/08+
TO-220-3
1908
询价
ST
2016+
TO-220
6528
房间原装进口现货假一赔十
询价
ST
17+
TO-220
6200
询价
STMicro.
23+
TO-220
7750
全新原装优势
询价
ST全系列
22+23+
TO-220
26726
绝对原装正品全新进口深圳现货
询价
STMicroelectronics
2019+
TO-220AB
65500
原装正品货到付款,价格优势!
询价
23+
N/A
35900
正品授权货源可靠
询价
ST
23+
TOTO-220ABNONISOL
37650
全新原装真实库存含13点增值税票!
询价
STM原厂目录
23+
TO-220
28500
授权代理直销,原厂原装现货,假一罚十,特价销售
询价
STM
1809+
TO-220
3675
就找我吧!--邀您体验愉快问购元件!
询价
更多STGP7NC60H供应商 更新时间2024-5-17 15:30:00