IXTT30N50P规格书应用电路市场行情无锡固电-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
IXTT30N50P	文件：352.94 Kbytes Page：5 Pages	N-Channel Enhancement Mode Avalanche Rated N-ChannelEnhancementModeAvalancheRated Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance-easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity	IXYS IXYS Integrated Circuits Division	IXYS
30N50	文件：326.02 Kbytes Page：2 Pages	15TQ060	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FSW30N50C	文件：2.44579 Mbytes Page：7 Pages	THINKISEMI24A,500VN-CHANNELPLANARSTRIPEPOWERMOSFETs	THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司	THINKISEMI
IXFH30N50	文件：336.82 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=30A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.16Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFH30N50	文件：110.19 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance-easytodriveandtoprotect •Fastintrin	IXYS IXYS Integrated Circuits Division	IXYS
IXFH30N50P	文件：326.23 Kbytes Page：5 Pages	PolarHVHiPerFETPowerMOSFET N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance-easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity	IXYS IXYS Integrated Circuits Division	IXYS
IXFH30N50P	文件：336.97 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=30A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFK30N50	文件：328.05 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=30A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.16Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFK30N50Q	文件：114.2 Kbytes Page：4 Pages	HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●Moldingepox	IXYS IXYS Integrated Circuits Division	IXYS
IXFR30N50	文件：92.65 Kbytes Page：4 Pages	HiPerFETPowerMOSFETsISOPLUS247	IXYS IXYS Integrated Circuits Division	IXYS
IXFR30N50	文件：329.75 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=30A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=160mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFR30N50Q	文件：92.65 Kbytes Page：4 Pages	HiPerFETPowerMOSFETsISOPLUS247	IXYS IXYS Integrated Circuits Division	IXYS
IXFT30N50	文件：110.19 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance-easytodriveandtoprotect •Fastintrin	IXYS IXYS Integrated Circuits Division	IXYS
IXFT30N50P	文件：326.23 Kbytes Page：5 Pages	PolarHVHiPerFETPowerMOSFET N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance-easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity	IXYS IXYS Integrated Circuits Division	IXYS
IXFV30N50P	文件：326.23 Kbytes Page：5 Pages	PolarHVHiPerFETPowerMOSFET N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance-easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity	IXYS IXYS Integrated Circuits Division	IXYS
IXFV30N50PS	文件：326.23 Kbytes Page：5 Pages	PolarHVHiPerFETPowerMOSFET N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance-easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity	IXYS IXYS Integrated Circuits Division	IXYS
IXFX30N50	文件：367.16 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=30A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.16Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFX30N50Q	文件：114.2 Kbytes Page：4 Pages	HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●Moldingepox	IXYS IXYS Integrated Circuits Division	IXYS
IXTH30N50	文件：380.75 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXTH30N50	文件：59.23 Kbytes Page：2 Pages	MegaMOSFET MegaMOS™FET N-ChannelEnhancementMode Features •InternationalstandardpackageJEDECTO-247AD •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Highcommutatingdv/dtrating •Fastswitchingtimes Applications •Switch-modeandresonant-modepowersupplies •M	IXYS IXYS Integrated Circuits Division	IXYS

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详细参数

型号：
IXTT30N50P
功能描述：
MOSFET 30.0 Amps 500 V 0.2 Ohm Rds
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	IXTT30N50P	IXYS	23+	TO-268AA	30000	晶体管-分立半导体产品-原装正品	询价
深圳市特顺芯科技有限公司	IXTT30N50P	IXYS	07+/08+	TO-268	91		询价
深圳市艾宇欣科技有限公司	IXTT30N50P	IXYS	1931+	N/A	18	加我qq或微信，了解更多详细信息,体验一站式购物	询价
深圳兆威电子有限公司	IXTT30N50P	IXYS/艾赛斯	23+	TO-268	90000	只做原厂渠道价格优势可提供技术支持	询价
深圳市科雨电子有限公司	IXTT30N50P	IXYS	1809+	TO-268	326	就找我吧!--邀您体验愉快问购元件!	询价
深圳市国宇半导体科技有限公司	IXTT30N50P	IXYS/艾赛斯	23+	TO-268	10000	公司只做原装正品	询价
深圳市易讯博科技有限公司	IXTT30N50P	IXYS	22+	NA	18	加我QQ或微信咨询更多详细信息,	询价
深圳市河锋鑫科技有限公司	IXTT30N50P	IXYS	22+	TO2683 D3Pak (2 Leads + Tab) T	9000	原厂渠道,现货配单	询价
深圳市芯福林电子科技有限公司	IXTT30N50P	IXYS	21+	TO2683 D3Pak (2 Leads + Tab) T	13880	公司只售原装,支持实单	询价
易创佳业科技（深圳）有限公司	IXTT30N50P	IXYS	23+	TO2683 D3Pak (2 Leads + Tab) T	9000	原装正品，支持实单	询价

更多IXTT30N50P供应商更新时间2024-5-13 10:12:00

详细参数

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