首页 >IXFH30N50P>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
IXFH30N50P | PolarHV HiPerFET Power MOSFET N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance-easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity | IXYS IXYS Integrated Circuits Division | IXYS | |
IXFH30N50P | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=30A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
15TQ060 | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
THINKISEMI24A,500VN-CHANNELPLANARSTRIPEPOWERMOSFETs | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司 | THINKISEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=30A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.16Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETPowerMOSFETs N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance-easytodriveandtoprotect •Fastintrin | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=30A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.16Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●Moldingepox | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETPowerMOSFETsISOPLUS247 | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=30A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=160mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETPowerMOSFETsISOPLUS247 | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETPowerMOSFETs N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance-easytodriveandtoprotect •Fastintrin | IXYS IXYS Integrated Circuits Division | IXYS | ||
PolarHVHiPerFETPowerMOSFET N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance-easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity | IXYS IXYS Integrated Circuits Division | IXYS | ||
PolarHVHiPerFETPowerMOSFET N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance-easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity | IXYS IXYS Integrated Circuits Division | IXYS | ||
PolarHVHiPerFETPowerMOSFET N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance-easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=30A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.16Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●Moldingepox | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
MegaMOSFET MegaMOS™FET N-ChannelEnhancementMode Features •InternationalstandardpackageJEDECTO-247AD •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Highcommutatingdv/dtrating •Fastswitchingtimes Applications •Switch-modeandresonant-modepowersupplies •M | IXYS IXYS Integrated Circuits Division | IXYS | ||
N-ChannelEnhancementMode N-ChannelEnhancementMode Features ●Designedforlinearoperation ●Internationalstandardpackages ●UnclampedInductiveSwitching(UIS)rated. ●MoldingepoxiesmeetUL94V-0flammabilityclassification ●Integratedgateresistorforeasyparalleling ●GuaranteedFBSOAat75°C Applica | IXYS IXYS Integrated Circuits Division | IXYS |
详细参数
- 型号:
IXFH30N50P
- 功能描述:
MOSFET 500V 30A
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IXYS |
24+ |
TO-247AD(IXFH) |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
IXYS/艾赛斯 |
23+ |
TO-247 |
32189 |
原装正品 华强现货 |
询价 | ||
Littelfuse/IXYS |
23+ |
TO-247 |
7814 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
IXYS |
08+(pbfree) |
TO-247 |
8866 |
询价 | |||
IXYS |
22+23+ |
1319 |
28128 |
绝对原装正品全新进口深圳现货 |
询价 | ||
VB |
2019 |
TO-247AD |
55000 |
绝对原装正品假一罚十! |
询价 | ||
IXYS |
1931+ |
N/A |
32 |
加我qq或微信,了解更多详细信息,体验一站式购物 |
询价 | ||
IXYS |
1809+ |
TO-247 |
326 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
IXYS/艾赛斯 |
23+ |
TO-247 |
5640 |
公司只做原装正品 |
询价 | ||
IXYS/艾赛斯 |
23+ |
TO-247 |
50000 |
全新原装正品现货,支持订货 |
询价 |
相关规格书
更多- IXFH30N50Q3
- IXFH320N10T2
- IXFH340N075T2
- IXFH36N50P
- IXFH400N075T2
- IXFH40N30Q
- IXFH42N20
- IXFH42N60P3
- IXFH44N50Q3
- IXFH50N20
- IXFH50N50P3
- IXFH52N30P
- IXFH52N50P2
- IXFH58N20Q
- IXFH6N100
- IXFH6N120P
- IXFH70N30Q3
- IXFH75N10
- IXFH76N07-12
- IXFH80N10Q
- IXFH86N30T
- IXFH94N30P3
- IXFH96N20P
- IXFH9N80Q
- IXFK110N07
- IXFK120N20P
- IXFK120N25P
- IXFK140N20P
- IXFK140N30P
- IXFK160N30T
- IXFK170N20P
- IXFK180N07
- IXFK180N15P
- IXFK200N10P
- IXFK20N120P
- IXFK220N17T2
- IXFK240N15T2
- IXFK24N100Q3
- IXFK26N120P
- IXFK320N17T2
- IXFK32N100Q3
- IXFK34N80
- IXFK360N15T2
- IXFK40N90P
- IXFK44N50P
相关库存
更多- IXFH30N60P
- IXFH32N50
- IXFH35N30
- IXFH36N60P
- IXFH40N30
- IXFH40N50Q
- IXFH42N50P2
- IXFH44N50P
- IXFH4N100Q
- IXFH50N30Q3
- IXFH50N60P3
- IXFH52N30Q
- IXFH58N20
- IXFH60N50P3
- IXFH6N100Q
- IXFH70N20Q3
- IXFH74N20P
- IXFH76N07-11
- IXFH7N80
- IXFH80N20Q
- IXFH8N80
- IXFH96N15P
- IXFH9N80
- IXFK102N30P
- IXFK120N20
- IXFK120N25
- IXFK120N30T
- IXFK140N25T
- IXFK150N30P3
- IXFK170N10P
- IXFK170N20T
- IXFK180N10
- IXFK180N25T
- IXFK20N120
- IXFK220N15P
- IXFK230N20T
- IXFK24N100
- IXFK24N80P
- IXFK27N80Q
- IXFK32N100P
- IXFK32N80Q3
- IXFK360N10T
- IXFK36N60P
- IXFK420N10T
- IXFK44N60