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IXTH30N50L

N-ChannelEnhancementMode

N-ChannelEnhancementMode Features ●Designedforlinearoperation ●Internationalstandardpackages ●UnclampedInductiveSwitching(UIS)rated. ●MoldingepoxiesmeetUL94V-0flammabilityclassification ●Integratedgateresistorforeasyparalleling ●GuaranteedFBSOAat75°C Applica

IXYS

IXYS Integrated Circuits Division

IXTH30N50L

iscN-ChannelMOSFETTransistor

•FEATURES •WithTO-247packaging •Withlowgatedriverequirements •Lowswitchingloss •Lowon-stateresistance •Easytodrive •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTH30N50P

N-ChannelEnhancementModeAvalancheRated

N-ChannelEnhancementModeAvalancheRated Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance-easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity

IXYS

IXYS Integrated Circuits Division

IXTH30N50P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTQ30N50L

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTQ30N50L

N-ChannelEnhancementMode

N-ChannelEnhancementMode Features ●Designedforlinearoperation ●Internationalstandardpackages ●UnclampedInductiveSwitching(UIS)rated. ●MoldingepoxiesmeetUL94V-0flammabilityclassification ●Integratedgateresistorforeasyparalleling ●GuaranteedFBSOAat75°C Applica

IXYS

IXYS Integrated Circuits Division

IXTQ30N50P

N-ChannelEnhancementModeAvalancheRated

N-ChannelEnhancementModeAvalancheRated Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance-easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity

IXYS

IXYS Integrated Circuits Division

IXTQ30N50P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTT30N50L

N-ChannelEnhancementMode

N-ChannelEnhancementMode Features ●Designedforlinearoperation ●Internationalstandardpackages ●UnclampedInductiveSwitching(UIS)rated. ●MoldingepoxiesmeetUL94V-0flammabilityclassification ●Integratedgateresistorforeasyparalleling ●GuaranteedFBSOAat75°C Applica

IXYS

IXYS Integrated Circuits Division

IXTV30N50P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTV30N50P

N-ChannelEnhancementModeAvalancheRated

N-ChannelEnhancementModeAvalancheRated Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance-easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity

IXYS

IXYS Integrated Circuits Division

IXTV30N50PS

N-ChannelEnhancementModeAvalancheRated

N-ChannelEnhancementModeAvalancheRated Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance-easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity

IXYS

IXYS Integrated Circuits Division

LPM30N50

SingleN-Channel,30V,50A,PowerMOSFET

POWERLowpower Semiconductor inc

微源半导体微源半导体股份有限公司

MTE30N50E

TMOSPOWERFET30AMPERES500VOLTSRDS(on)=0.150OHM

ISOTOPTMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewenergydesignalsooffersadrain–to–sourcediodewithfastrecoverytime.Designedforhig

MotorolaMotorola, Inc

摩托罗拉

MTM30N50

PowerFieldEffectTransistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

MTM30N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=30A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.35Ω(Max)@VGS=10V DESCRIPTION ·Motordrive ·DC-DCconverter ·powerswitchandsolenoiddrive

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTY30N50

TMOSPOWERFET30AMPERES500VOLTSRDS(on)=0.15OHM

TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdesignalsooffersadrain–to–sourcediodewithfastrecoverytime.Designedforhi

MotorolaMotorola, Inc

摩托罗拉

MTY30N50E

TMOSPOWERFET30AMPERES500VOLTSRDS(on)=0.15OHM

TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdesignalsooffersadrain–to–sourcediodewithfastrecoverytime.Designedforhi

MotorolaMotorola, Inc

摩托罗拉

MTY30N50E

N?묬hannelPowerMOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

RFP-30N50T-S

AluminumNitrideTermination30Watts,50W

ANARENAnaren

安伦

详细参数

  • 型号:

    IXTT30N50P

  • 功能描述:

    MOSFET 30.0 Amps 500 V 0.2 Ohm Rds

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IXYS
24+
TO-268AA
30000
晶体管-分立半导体产品-原装正品
询价
IXYS
07+/08+
TO-268
91
询价
IXYS
1931+
N/A
18
加我qq或微信,了解更多详细信息,体验一站式购物
询价
IXYS/艾赛斯
23+
TO-268
90000
只做原厂渠道价格优势可提供技术支持
询价
IXYS
1809+
TO-268
326
就找我吧!--邀您体验愉快问购元件!
询价
IXYS/艾赛斯
23+
TO-268
10000
公司只做原装正品
询价
IXYS
22+
NA
18
加我QQ或微信咨询更多详细信息,
询价
IXYS
22+
TO2683 D3Pak (2 Leads + Tab) T
9000
原厂渠道,现货配单
询价
IXYS
21+
TO2683 D3Pak (2 Leads + Tab) T
13880
公司只售原装,支持实单
询价
IXYS
23+
TO2683 D3Pak (2 Leads + Tab) T
9000
原装正品,支持实单
询价
更多IXTT30N50P供应商 更新时间2024-5-27 17:19:00