首页 >IRG4RC10STRR>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
包装：卷带（TR） 封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 14A 38W DPAK | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.39V,@Vge=15V,Ic=5.0A) ShortCircuitRatedUltraFastIGBT Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Tighterparameterdistributionandhigherefficiencythanpreviousgenerations | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.10V,@Vge=15V,IC=2.0A) Features •Extremelylowvoltagedrop;1.0Vtypicalat2A,100°C •Standard:Optimizedforminimumsaturation voltageandlowoperatingfrequencies( | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.39V,@Vge=15V,Ic=5.0A) Features •ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10µs@125°C,VGE=15V •Generation4IGBTdesignprovideshigherefficiencythanGeneration3 •IndustrystandardTO-252AApackage Benefits •Generation4IGBTsofferhig | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.39V,@Vge=15V,Ic=5.0A) Features •ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10µs@125°C,VGE=15V •Generation4IGBTdesignprovideshigherefficiencythanGeneration3 •IndustrystandardTO-252AApackage Benefits •Generation4IGBTsofferhig | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.39V,@Vge=15V,Ic=5.0A) ShortCircuitRatedUltraFastIGBT Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Tighterparameterdistributionandhigherefficiencythanpreviousgenerations | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE ShortCircuitRatedUltraFastIGBT Features •ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10µs@125°C,VGE=15V •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneration | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTORShortCircuitRatedUltraFastIGBT | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.10V,@Vge=15V,IC=2.0A) Features •Extremelylowvoltagedrop;1.0Vtypicalat2A,100°C •Standard:Optimizedforminimumsaturation voltageandlowoperatingfrequencies( | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.10V,@Vge=15V,Ic=2.0A) Features •Extremelylowvoltagedrop1.1V(typ)@2A •S-Series:Minimizespowerdissipationatupto3 KHzPWMfrequencyininverterdrives,upto4 KHzinbrushlessDCdrives. •Tightparameterdistribution •IGBTco-packagedwithHEXFREDTMultrafast, ultra-soft-recoveryanti- | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •Extremelylowvoltagedrop1.1V(typ)@2A •S-Series:Minimizespowerdissipationatupto3 KHzPWMfrequencyininverterdrives,upto4 KHzinbrushlessDCdrives. •Tightparameterdistribution •IGBTco-packagedwithHEXFREDTMultrafast, ultra-soft-recoveryanti- | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.15V,@Vge=15V,Ic=5.0A) Features •UltraFast:Optimizedforhighoperatingfrequencies(8-40kHzinhardswitching,>200kHzinresonantmode) •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneration •IndustrystandardTO-252AApackage Benefits •Generation | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.15V,@Vge=15V,Ic=5.0A) UltraFastCoPackIGBT Features •UltraFast:Optimizedformediumoperatingfrequencies(8-40kHzinhardswitching,>200kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneration •IGBTco-packagedwithHEXFREDTMu | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •UltraFast:Optimizedforhighoperatingfrequencies(8-40kHzinhardswiching,>200kHzinresonantmode) •Generation4IGBTdesignprovidestigherparameterdistributionandhigherefficiencythanpreviousgeneration •IGBTco-packagedwithHEXFRED™ultrafast,ultra-soft-recovery | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTOR Features •UltraFast:Optimizedforhighoperatingfrequencies(8-40kHzinhardswiching,>200kHzinresonantmode) •Generation4IGBTdesignprovidestigherparameterdistributionandhigherefficiencythanpreviousgeneration •IndustrystandardTO-252AApackage •Lead-Free Benefits | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTOR | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
Generation4IGBTdesignprovidestighterparameterdistributionandhighereffciencythanpreviousgeneration Features •UltraFast:Optimizedforhighoperatingfrequencies(8-40kHzinhardswiching,>200kHzinresonantmode) •Generation4IGBTdesignprovidestigherparameterdistributionandhigherefficiencythanpreviousgeneration •IndustrystandardTO-252AApackage •Lead-Free Benefits | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |
产品属性
- 产品编号：
IRG4RC10STRRPBF
- 制造商：
Infineon Technologies
- 类别：
分立半导体产品 > 晶体管 - UGBT、MOSFET - 单
- 包装：
卷带（TR）
- 不同 Vge、Ic 时 Vce(on)（最大值）：
1.8V @ 15V，8A
- 开关能量：
140µJ（开），2.58mJ（关）
- 输入类型：
标准
- 25°C 时 Td（开/关）值：
25ns/630ns
- 测试条件：
480V，8A，100 欧姆，15V
- 工作温度：
-55°C ~ 150°C（TJ）
- 安装类型：
表面贴装型
- 封装/外壳：
TO-252-3，DPak（2 引线 + 接片），SC-63
- 供应商器件封装：
D-Pak
- 描述：
IGBT 600V 14A 38W DPAK
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
07+/08+ |
TO-252 |
7500 |
询价 | |||
IR |
23+ |
D-PAK |
7750 |
全新原装优势 |
询价 | ||
InfineonTechnologies |
2019+ |
D-Pak |
65500 |
原装正品货到付款,价格优势! |
询价 | ||
International Rectifier |
2022+ |
1 |
全新原装 货期两周 |
询价 | |||
Infineon Technologies |
21+ |
D-Pak |
6000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
询价 | ||
INFINEON |
1503+ |
TO-252 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Infineon |
22+ |
NA |
2118 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
Infineon Technologies |
22+ |
DPak |
9000 |
原厂渠道,现货配单 |
询价 | ||
Infineon Technologies |
21+ |
DPak |
13880 |
公司只售原装,支持实单 |
询价 | ||
Infineon Technologies |
2022+ |
DPak |
6680 |
原厂原装，欢迎咨询 |
询价 |
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