IRG4RC10KDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

ShortCircuitRatedUltraFastIGBT Features •ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10µs@125°C,VGE=15V •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneration

IRG4RC10KDPBF

包装：管件 封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 9A 38W DPAK

IRG4RC10

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.39V,@Vge=15V,Ic=5.0A)

ShortCircuitRatedUltraFastIGBT Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Tighterparameterdistributionandhigherefficiencythanpreviousgenerations

IRG4RC10

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.10V,@Vge=15V,IC=2.0A)

Features •Extremelylowvoltagedrop;1.0Vtypicalat2A,100°C •Standard:Optimizedforminimumsaturation voltageandlowoperatingfrequencies(

IRG4RC10

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.39V,@Vge=15V,Ic=5.0A)

Features •ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10µs@125°C,VGE=15V •Generation4IGBTdesignprovideshigherefficiencythanGeneration3 •IndustrystandardTO-252AApackage Benefits •Generation4IGBTsofferhig

IRG4RC10K

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.39V,@Vge=15V,Ic=5.0A)

Features •ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10µs@125°C,VGE=15V •Generation4IGBTdesignprovideshigherefficiencythanGeneration3 •IndustrystandardTO-252AApackage Benefits •Generation4IGBTsofferhig

IRG4RC10KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.39V,@Vge=15V,Ic=5.0A)

ShortCircuitRatedUltraFastIGBT Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Tighterparameterdistributionandhigherefficiencythanpreviousgenerations

IRG4RC10KPBF

INSULATEDGATEBIPOLARTRANSISTORShortCircuitRatedUltraFastIGBT

IRG4RC10S

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.10V,@Vge=15V,IC=2.0A)

Features •Extremelylowvoltagedrop;1.0Vtypicalat2A,100°C •Standard:Optimizedforminimumsaturation voltageandlowoperatingfrequencies(

IRG4RC10SD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.10V,@Vge=15V,Ic=2.0A)

Features •Extremelylowvoltagedrop1.1V(typ)@2A •S-Series:Minimizespowerdissipationatupto3 KHzPWMfrequencyininverterdrives,upto4 KHzinbrushlessDCdrives. •Tightparameterdistribution •IGBTco-packagedwithHEXFREDTMultrafast, ultra-soft-recoveryanti-

IRG4RC10SDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •Extremelylowvoltagedrop1.1V(typ)@2A •S-Series:Minimizespowerdissipationatupto3 KHzPWMfrequencyininverterdrives,upto4 KHzinbrushlessDCdrives. •Tightparameterdistribution •IGBTco-packagedwithHEXFREDTMultrafast, ultra-soft-recoveryanti-

IRG4RC10SDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRG4RC10U

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.15V,@Vge=15V,Ic=5.0A)

Features •UltraFast:Optimizedforhighoperatingfrequencies(8-40kHzinhardswitching,>200kHzinresonantmode) •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneration •IndustrystandardTO-252AApackage Benefits •Generation

IRG4RC10UD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.15V,@Vge=15V,Ic=5.0A)

UltraFastCoPackIGBT Features •UltraFast:Optimizedformediumoperatingfrequencies(8-40kHzinhardswitching,>200kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneration •IGBTco-packagedwithHEXFREDTMu

IRG4RC10UDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRG4RC10UDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •UltraFast:Optimizedforhighoperatingfrequencies(8-40kHzinhardswiching,>200kHzinresonantmode) •Generation4IGBTdesignprovidestigherparameterdistributionandhigherefficiencythanpreviousgeneration •IGBTco-packagedwithHEXFRED™ultrafast,ultra-soft-recovery

IRG4RC10UPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features •UltraFast:Optimizedforhighoperatingfrequencies(8-40kHzinhardswiching,>200kHzinresonantmode) •Generation4IGBTdesignprovidestigherparameterdistributionandhigherefficiencythanpreviousgeneration •IndustrystandardTO-252AApackage •Lead-Free Benefits

IRG4RC10UPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRG4RC10UTRPBF

Generation4IGBTdesignprovidestighterparameterdistributionandhighereffciencythanpreviousgeneration

Features •UltraFast:Optimizedforhighoperatingfrequencies(8-40kHzinhardswiching,>200kHzinresonantmode) •Generation4IGBTdesignprovidestigherparameterdistributionandhigherefficiencythanpreviousgeneration •IndustrystandardTO-252AApackage •Lead-Free Benefits