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IRF9140

P-CHANNELPOWERMOSFETS

FEATURES •LowRDS(on) •Improvedinductiveruggedness •Fsatswitchingtimes •Ruggedpolysilicongatecellstructure •Lowinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability

SamsungSamsung Group

三星三星半导体

IRF9140

TRANSISTORSP-CHANNEL(Vdss=-100V,Rds(on)=0.2ohm,Id=-18A)

ProductSummary TheHEXFET®technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF9140

P-CHANNELPOWERMOSFET

FEATURES •HERMETICALLYSEALEDTO–3METALPACKAGE •SIMPLEDRIVEREQUIREMENTS •SCREENINGOPTIONSAVAILABLE

SEME-LAB

Seme LAB

IRFM9140

POWERMOSFETTHRU-HOLE(TO-254AA)

HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establishedadvantagesofMOSFETs,s

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFM9140

SimpleDriveRequirements

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFN9140

SimpleDriveRequirements

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFN9140

POWERMOSFETSURFACEMOUNT(SMD-1)

HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establishedadvantagesofMOSFETs,s

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFN9140

POWERMOSFETN-CHANNEL(BVdss=-100V,Rds(on)=0.20ohm,Id=-18A)

HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establishedadvantagesofMOSFETs,s

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFN9140SMD

P-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFP9140

P-CHANNELPOWERMOSFETS

FEATURES •LowRDS(on) •Improvedinductiveruggedness •Fsatswitchingtimes •Ruggedpolysilicongatecellstructure •Lowinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability

SamsungSamsung Group

三星三星半导体

IRFP9140

19A,100V,0.200Ohm,P-ChannelPowerMOSFET

ThisisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.ItisaP-Channelenhancementmodesilicongatepowerfieldeffecttransistordesignedforapplicationssuchasswitchingregulators,switchingc

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

IRFP9140

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude

VishayVishay Siliconix

威世科技

IRFP9140

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFP9140

P-CHANNELPOWERMOSFETS

FEATURES •LowRDS(on) •Improvedinductiveruggedness •Fastswitchingtimes •Ruggedpolysilicongatecellstructure •Lowinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliablility

SamsungSamsung Group

三星三星半导体

IRFP9140

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •P-channel •Isolatedcentralmountinghole •175°Coperatingtemperature •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatash

VishayVishay Siliconix

威世科技

IRFP9140N

iscP-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFP9140N

PowerMOSFET(Vdss=-100V,Rds(on)=0.117ohm,Id=-23A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFP9140NPBF

HEXFET짰PowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFP9140NPBF

ADVANCEDPROCESSTECHNOLOGY

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFP9140PBF

PowerMOSFET

VishayVishay Siliconix

威世科技

供应商型号品牌批号封装库存备注价格
IR
22+
TO-247
6000
终端可免费供样,支持BOM配单
询价
IR
23+
TO-247
8000
专注配单,只做原装进口现货
询价
IR
23+
TO-247
8000
专注配单,只做原装进口现货
询价
IR
07+/08+
TO-247-3
311
询价
IR
15+
TO-247
3020
现货-ROHO
询价
IR
13+
TO-247
300
特价热销现货库存
询价
IR
23+
TO-247
3200
绝对全新原装!优势供货渠道!特价!请放心订购!
询价
IR
23+
TO-247AC
7750
全新原装优势
询价
IR
23+
1018
TO-247AC
询价
IR
16+
原厂封装
5600
原装现货假一罚十
询价
更多IRFP9140N-CHINA供应商 更新时间2024-5-21 14:00:00