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IRFN9140中文资料PDF规格书

IRFN9140
厂商型号

IRFN9140

功能描述

POWER MOSFET SURFACE MOUNT (SMD-1)

文件大小

174.37 Kbytes

页面数量

7

生产厂商 International Rectifier
企业简称

IRF英飞凌

中文名称

英飞凌科技公司官网

原厂标识
数据手册

下载地址一下载地址二

更新时间

2024-6-15 20:00:00

IRFN9140规格书详情

HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance.

Features:

■ Simple Drive Requirements

■ Ease of Paralleling

■ Hermetically Sealed

■ Electrically Isolated

■ Surface Mount

■ Dynamic dv/dt Rating

■ Light-weight

产品属性

  • 型号:

    IRFN9140

  • 制造商:

    International Rectifier

  • 功能描述:

    EXFET, Hi-Rel, -100v, -18A, .32 Ohohms, SMD-1

  • 功能描述:

    TRANS MOSFET P-CH 100V 18A 3SMD-1 - Bulk

  • 功能描述:

    P CHANNEL MOSFET, -100V, 18A, SMD-1; Transistor

  • Polarity:

    P Channel; Continuous Drain Current

  • Id:

    -18A; Drain Source Voltage

  • Vds:

    -100V; On Resistance

  • Rds(on):

    200mohm; Rds(on) Test Voltage

  • Vgs:

    -10V; Threshold Voltage Vgs

  • Typ:

    -4V ;RoHS

  • Compliant:

    No

供应商 型号 品牌 批号 封装 库存 备注 价格
SML
23+
NA/
11
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IR
1341+
SMD
14
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IR
2023+
80000
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IR
2046+
9852
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SML
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NA
73
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SML
NA
265209
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询价
22+
长期备有现货
500000
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IR
2020+
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350000
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IR
18+
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85600
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IR
200638
2
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