IRFR120TR资料datasheet下载贸易商威世科技-114ic电子网

首页 >IRFR120TR>规格书列表

零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
IRFR120TR	文件：179.46 Kbytes Page：6 Pages	HEXFET POWER MOSFET DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •DynamicdV/dtRating •RepetitiveAvalancheRated •SurfaceMount(IRFR120) •Str	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFR120TR	文件：1.70201 Mbytes Page：8 Pages	IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	VishayVishay Siliconix 威世科技	Vishay
IRFR120TRL	文件：1.88411 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	VishayVishay Siliconix 威世科技	Vishay
IRFR120TRL	文件：1.70201 Mbytes Page：8 Pages	IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	VishayVishay Siliconix 威世科技	Vishay
IRFR120TRL	文件：4.27848 Mbytes Page：7 Pages	Dynamic dV/dt Rating DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR120TRL	文件：4.22483 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR120TRLPBF	文件：1.88411 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	VishayVishay Siliconix 威世科技	Vishay
IRFR120TRLPBF	文件：1.70201 Mbytes Page：8 Pages	IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	VishayVishay Siliconix 威世科技	Vishay
IRFR120TRLPBF	文件：4.27848 Mbytes Page：7 Pages	Dynamic dV/dt Rating DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR120TRLPBF	文件：4.22483 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR120TRPBF	文件：1.70201 Mbytes Page：8 Pages	IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	VishayVishay Siliconix 威世科技	Vishay
IRFR120TRPBF	文件：4.22483 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR120TRR	文件：1.70201 Mbytes Page：8 Pages	IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	VishayVishay Siliconix 威世科技	Vishay
IRFR120TRR	文件：4.22483 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR120TRRPBF	文件：1.70201 Mbytes Page：8 Pages	IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	VishayVishay Siliconix 威世科技	Vishay
IRFR120TRRPBF	文件：4.22483 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR120TRL	文件：4.27854 Mbytes Page：7 Pages	Dynamic dV/dt Rating	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR120TRLPBF	文件：4.27854 Mbytes Page：7 Pages	Dynamic dV/dt Rating	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR120TRLPBFA	文件：838.17 Kbytes Page：13 Pages	Power MOSFET	VishayVishay Siliconix 威世科技	Vishay
IRFR120TRLPBF-BE3AB	文件：838.17 Kbytes Page：13 Pages	Power MOSFET	VishayVishay Siliconix 威世科技	Vishay

12 >>>

详细参数

型号：
IRFR120TR
功能描述：
MOSFET N-Chan 100V 7.7 Amp
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市智芯远电子有限公司	IRFR120TR	IR	22+	SOT	58560	代理品牌,原装现货,假一罚十	询价
深圳市星佑电子有限公司	IRFR120TR	IR	05+	原厂原装	2051	只做全新原装真实现货供应	询价
绿盛电子(香港)有限公司	IRFR120TR	IR	2015+	DIP/SMD	19889	一级代理原装现货,特价热卖!	询价
深圳市昌和盛利电子有限公司	IRFR120TR	IR	23+	原厂封装	9896		询价
深圳市博浩通科技有限公司	IRFR120TR	VISHAY	23+	D2Pak	7750	全新原装优势	询价
深圳市弘为电子有限公司	IRFR120TR		16+	TO-252	3000	原装现货假一罚十	询价
深圳市毅创腾电子科技有限公司	IRFR120TR	IR		SOT	1000	正品原装--自家现货-实单可谈	询价
深圳市永贝尔科技有限公司	IRFR120TR	IRF	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
千层芯半导体(深圳)有限公司	IRFR120TR	IR	2018+	SOT	30617	主打XILINX品牌价格绝对优势	询价
深圳市振宏微科技有限公司	IRFR120TR	SILICONIX	23+	NA	1586	专做原装正品,假一罚百!	询价

更多IRFR120TR供应商更新时间2024-5-8 14:18:00

详细参数

相关规格书

相关库存