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IRFS630

N-CHANNELMOSFETinaTO-220FPlasticPackage

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

IRFS630

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc2未分类制造商

IRFS630A

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc2未分类制造商

IRFS630A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFS630A

AdvancedPowerMOSFET

FEATURES AvalancheRuggedTechnology RuggedGateOxideTechnology LowerInputCapacitance ImprovedGateCharge ExtendedSafeOperatingArea LowerLeakageCurrent:10㎂(Max.)@VDS=200V LowRDS(ON):0.333(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFS630B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFW630

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Features •9.0A,200V,RDS(on)=0.4Ω@VGS=10V •Lowgatecharge(typical22nC) •LowCrss(typical22pF) •Fastswitching •100av

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFW630B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Features •9.0A,200V,RDS(on)=0.4Ω@VGS=10V •Lowgatecharge(typical22nC) •LowCrss(typical22pF) •Fastswitching •100av

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFW630B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Features •9.0A,200V,RDS(on)=0.4Ω@VGS=10V •Lowgatecharge(typical22nC) •LowCrss(typical22pF) •Fastswitching •100av

KERSEMI

Kersemi Electronic Co., Ltd.

IRL630

PowerMOSFET(Vdss=200V,RdS(on)=0.40ohm,Id=9.0A)

VDSS=200V RDS(on)=0.40Ω ID=9.0A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcomme

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRL630

PowerMOSFET

VDS(V)200V RDS(on)(Ω)VGS=5V0.40 Qg(Max.)(nC)40 Qgs(nC)5.5 Qgd(nC)24 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivenes

VishayVishay Siliconix

威世科技

IRL630

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Logic-levelgatedrive •RDS(on)specifiedatVGS=4Vand5V •150°Coperatingtemperature •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912

VishayVishay Siliconix

威世科技

IRL630

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Logic-levelgatedrive •RDS(on)specifiedatVGS=4Vand5V •150°Coperatingtemperature •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912

VishayVishay Siliconix

威世科技

IRL630

HEXFETPowerMosfet

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRL630A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRL630A

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=0.4Ω ID=9A FEATURES ♦Logic-LevelGateDrive ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦LowerLeakageCurrent:10µA(Max.)@VDS=200V ♦LowerRDS(ON):0.335Ω

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRL630PBF

HEXFET짰PowerMOSFET

VDSS=200V RDS(on)=0.40Ω ID=9.0A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcomme

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRL630PBF

PowerMOSFET

VDS(V)200V RDS(on)(Ω)VGS=5V0.40 Qg(Max.)(nC)40 Qgs(nC)5.5 Qgd(nC)24 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivenes

VishayVishay Siliconix

威世科技

IRL630S

PowerMOSFET(Vdss=200V,Rds(on)=0.40ohm,Id=9.0A)

VDSS=200V RDS(on)=0.40Ω ID=9.0A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheSMD-220isasurfacemountpowerpackagecapableo

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRL630S

AvailableinTapeandReel

VishayVishay Siliconix

威世科技

供应商型号品牌批号封装库存备注价格
IR
22+
TO-220
6000
终端可免费供样,支持BOM配单
询价
ST
22+
TO-220
16900
支持样品 原装现货 提供技术支持!
询价
IR
23+
TO-220
8000
专注配单,只做原装进口现货
询价
IR
23+
TO-220
8000
专注配单,只做原装进口现货
询价
IR
23+
TO3P
8653
全新原装优势
询价
IR
23+
TO-247
10000
公司只做原装正品
询价
哈里斯
21+ROHS
NA
37850
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
IR
23+
TO-247
6000
原装正品,支持实单
询价
IR
24+
TO-247
12300
独立分销商,公司只做原装,诚心经营,免费试样正品保证
询价
VISHAY-威世
24+25+/26+27+
TO-247-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
更多IRFP630供应商 更新时间2024-6-1 14:00:00