| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
71V2546S | 128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆128Kx36memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRI | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | |
128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆128Kx36memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRI | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆128Kx36memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRI | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆128Kx36memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRI | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆128Kx36memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRI | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆128Kx36memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRI | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆128Kx36memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRI | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆128Kx36memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRI | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆128Kx36memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRI | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆128Kx36memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRI | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆128Kx36memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRI | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆128Kx36memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRI | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆128Kx36memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRI | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆128Kx36memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRI | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆128Kx36memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRI | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆128Kx36memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRI | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆128Kx36memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRI | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
3.3V Synchronous ZBT SRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
3.3V Synchronous ZBT SRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
3.3V Synchronous ZBT SRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IDT |
0651+/0649+/0648+ |
BGA |
230 |
询价 | |||
IDT |
15+ |
QFP |
58 |
全新原装正品现货 |
询价 | ||
IDT |
16+ |
QFP |
2500 |
进口原装现货/价格优势! |
询价 | ||
IDT |
22+ |
BGA |
2800 |
原装优势!绝对公司现货!可长期供货! |
询价 | ||
IDT |
BGAQFP |
6688 |
15 |
现货库存 |
询价 | ||
IDT, Integrated Device Technol |
21+ |
67-VFBGA |
5280 |
进口原装!长期供应!绝对优势价格(诚信经营 |
询价 | ||
IDT, Integrated Device Technol |
21+ |
- |
56200 |
一级代理/放心采购 |
询价 | ||
RENESAS(瑞萨)/IDT |
1921+ |
PBGA-119(14x22) |
3575 |
向鸿仓库现货,优势绝对的原装! |
询价 | ||
IDT |
14/15+ |
BGAQFP |
364 |
普通 |
询价 | ||
IDT |
1931+ |
N/A |
1186 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 |
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相关库存
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