首页 >71V35761SA200BG>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
71V35761SA200BG | 128K x 36 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Features ◆128Kx36memoryconfigurations ◆Supportshighsystemspeed: Commercial: –200MHz3.1nsclockaccesstime CommercialandIndustrial: –183MHz3.3nsclockaccesstime –166MHz3.5nsclockaccesstime ◆LBOinputselectsinterleavedorlinearburstmode ◆3.3Vcorepowersupply | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | |
71V35761SA200BG | 包装：托盘 封装/外壳：119-BGA 类别：集成电路（IC） 存储器 描述：IC SRAM 4.5MBIT PARALLEL 119PBGA | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | |
128K x 36 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Features ◆128Kx36memoryconfigurations ◆Supportshighsystemspeed: Commercial: –200MHz3.1nsclockaccesstime CommercialandIndustrial: –183MHz3.3nsclockaccesstime –166MHz3.5nsclockaccesstime ◆LBOinputselectsinterleavedorlinearburstmode ◆3.3Vcorepowersupply | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
128K x 36 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Features ◆128Kx36memoryconfigurations ◆Supportshighsystemspeed: Commercial: –200MHz3.1nsclockaccesstime CommercialandIndustrial: –183MHz3.3nsclockaccesstime –166MHz3.5nsclockaccesstime ◆LBOinputselectsinterleavedorlinearburstmode ◆3.3Vcorepowersupply | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
128K x 36 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Features ◆128Kx36memoryconfigurations ◆Supportshighsystemspeed: Commercial: –200MHz3.1nsclockaccesstime CommercialandIndustrial: –183MHz3.3nsclockaccesstime –166MHz3.5nsclockaccesstime ◆LBOinputselectsinterleavedorlinearburstmode ◆3.3Vcorepowersupply | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
包装：托盘 封装/外壳：119-BGA 类别：集成电路（IC） 存储器 描述：IC SRAM 4.5MBIT PARALLEL 119PBGA | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
包装：托盘 封装/外壳：119-BGA 类别：集成电路（IC） 存储器 描述：IC SRAM 4.5MBIT PARALLEL 119PBGA | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
128Kx363.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect Features ◆128Kx36memoryconfigurations ◆Supportshighsystemspeed: Commercial: –200MHz3.1nsclockaccesstime CommercialandIndustrial: –183MHz3.3nsclockaccesstime –166MHz3.5nsclockaccesstime ◆LBOinputselectsinterleavedorlinearburstmode ◆3.3Vcorepowersupply | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT |
产品属性
- 产品编号：
71V35761SA200BG
- 制造商：
Renesas Electronics America Inc
- 类别：
集成电路（IC） > 存储器
- 包装：
托盘
- 存储器类型：
易失
- 存储器格式：
SRAM
- 技术：
SRAM - 同步，SDR
- 存储容量：
4.5Mb（128K x 36）
- 存储器接口：
并联
- 电压 - 供电：
3.135V ~ 3.465V
- 工作温度：
0°C ~ 70°C（TA）
- 安装类型：
表面贴装型
- 封装/外壳：
119-BGA
- 供应商器件封装：
119-PBGA（14x22）
- 描述：
IC SRAM 4.5MBIT PARALLEL 119PBGA
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS(瑞萨) |
23+ |
119-PBGA (14.00L X 22.00W X 1. |
840 |
全新、原装 |
询价 | ||
IDT, Integrated Device Technol |
21+ |
78-TFBGA |
5280 |
进口原装!长期供应!绝对优势价格(诚信经营 |
询价 | ||
IDT, Integrated Device Technol |
21+ |
119-PBGA(14x22) |
56200 |
一级代理/放心采购 |
询价 | ||
IDT |
1931+ |
N/A |
1186 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
RENESAS(瑞萨)/IDT |
2117+ |
PBGA-119(14x22) |
315000 |
84个/托盘一级代理专营品牌!原装正品,优势现货,长 |
询价 | ||
IDT |
20+ |
BGA-119 |
168 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Renesas |
21+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
询价 | |||
IDT |
22+ |
NA |
1186 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
IDT, Integrated Device Techno |
2022+ |
119-PBGA(14x22) |
7300 |
原装现货 |
询价 | ||
Integrated Device Technology |
2022+ |
原厂原包装 |
8600 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 |
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