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71V416S15YG

3.3V CMOS Static RAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

71V416S15YG

包装:管件 封装/外壳:44-BSOJ(0.400",10.16mm 宽) 类别:集成电路(IC) 存储器 描述:IC SRAM 4MBIT PARALLEL 44SOJ

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V416S15YG8

3.3V CMOS Static RAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

71V416S15YGI

3.3V CMOS Static RAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

71V416S15YGI8

3.3V CMOS Static RAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

71V416S15YGI

包装:管件 封装/外壳:44-BSOJ(0.400",10.16mm 宽) 类别:集成电路(IC) 存储器 描述:IC SRAM 4MBIT PARALLEL 44SOJ

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V416S15YGI8

包装:管件 封装/外壳:44-BSOJ(0.400",10.16mm 宽) 类别:集成电路(IC) 存储器 描述:IC SRAM 4MBIT PARALLEL 44SOJ

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V416S15BEG

3.3VCMOSStaticRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

71V416S15BEGI

3.3VCMOSStaticRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

71V416S15PHG

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

71V416S15PHG

3.3VCMOSStaticRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

71V416S15PHGI

3.3VCMOSStaticRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V416S15BEG

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V416S15BEGI

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V416S15PHG

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V416S15PHGI

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V416S15PHI

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V416S15Y

3.3VCMOSSTATICRAM4MEG(256Kx16-BIT)

DESCRIPTION: TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.ItisfabricatedusingIDT’shighperfomance,high-reliabilityCMOStechnology.Thisstate-ofthe-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfo

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V416S15YG

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V416S15YGI

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

产品属性

  • 产品编号:

    71V416S15YG

  • 制造商:

    Renesas Electronics America Inc

  • 类别:

    集成电路(IC) > 存储器

  • 包装:

    管件

  • 存储器类型:

    易失

  • 存储器格式:

    SRAM

  • 技术:

    SRAM - 异步

  • 存储容量:

    4Mb(256K x 16)

  • 存储器接口:

    并联

  • 写周期时间 - 字,页:

    15ns

  • 电压 - 供电:

    3V ~ 3.6V

  • 工作温度:

    0°C ~ 70°C(TA)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    44-BSOJ(0.400",10.16mm 宽)

  • 供应商器件封装:

    44-SOJ

  • 描述:

    IC SRAM 4MBIT PARALLEL 44SOJ

供应商型号品牌批号封装库存备注价格
Integrated Device Technology (
2022+
1
全新原装 货期两周
询价
IDT, Integrated Device Technol
21+
44-SOJ
56200
一级代理/放心采购
询价
RENESAS(瑞萨)/IDT
1921+
SOJ-44
3575
向鸿仓库现货,优势绝对的原装!
询价
IDT
1931+
N/A
1186
加我qq或微信,了解更多详细信息,体验一站式购物
询价
RENESAS(瑞萨)/IDT
2117+
SOJ-44
315000
16个/管一级代理专营品牌!原装正品,优势现货,长期
询价
IDT
20+
SOP-44
256
就找我吧!--邀您体验愉快问购元件!
询价
IDT, Integrated Device Technol
21+
NA
11200
正品专卖,进口原装深圳现货
询价
Renesas
21+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
询价
RENESAS(瑞萨电子)
22+
NA
500000
万三科技,秉承原装,购芯无忧
询价
IDT
22+
NA
1186
加我QQ或微信咨询更多详细信息,
询价
更多71V416S15YG供应商 更新时间2024-5-23 9:50:00