首页 >71V35761S166BGG>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

71V35761S166BGG

包装:托盘 封装/外壳:119-BGA 类别:集成电路(IC) 存储器 描述:IC SRAM 4.5MBIT PARALLEL 119PBGA

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V35761S166BGGI

包装:托盘 封装/外壳:119-BGA 类别:集成电路(IC) 存储器 描述:IC SRAM 4.5MBIT PARALLEL 119PBGA

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V35761S166BGGI8

包装:托盘 封装/外壳:119-BGA 类别:集成电路(IC) 存储器 描述:IC SRAM 4.5MBIT PARALLEL 119PBGA

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V35761S166PFG

128Kx363.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Features ◆128Kx36memoryconfigurations ◆Supportshighsystemspeed: Commercial: –200MHz3.1nsclockaccesstime CommercialandIndustrial: –183MHz3.3nsclockaccesstime –166MHz3.5nsclockaccesstime ◆LBOinputselectsinterleavedorlinearburstmode ◆3.3Vcorepowersupply

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V35761S166PFGI

128Kx363.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Features ◆128Kx36memoryconfigurations ◆Supportshighsystemspeed: Commercial: –200MHz3.1nsclockaccesstime CommercialandIndustrial: –183MHz3.3nsclockaccesstime –166MHz3.5nsclockaccesstime ◆LBOinputselectsinterleavedorlinearburstmode ◆3.3Vcorepowersupply

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

IDT71V35761S166BG

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V35761S166BGG

3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V35761S166BGGI

3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V35761S166BGI

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V35761S166BQ

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V35761S166BQG

3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V35761S166BQGI

3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V35761S166BQI

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V35761S166PF

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V35761S166PFG

3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V35761S166PFGI

3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V35761S166PFI

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

产品属性

  • 产品编号:

    71V35761S166BGG

  • 制造商:

    Renesas Electronics America Inc

  • 类别:

    集成电路(IC) > 存储器

  • 包装:

    托盘

  • 存储器类型:

    易失

  • 存储器格式:

    SRAM

  • 技术:

    SRAM - 同步,SDR

  • 存储容量:

    4.5Mb(128K x 36)

  • 存储器接口:

    并联

  • 电压 - 供电:

    3.135V ~ 3.465V

  • 工作温度:

    0°C ~ 70°C(TA)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    119-BGA

  • 供应商器件封装:

    119-PBGA(14x22)

  • 描述:

    IC SRAM 4.5MBIT PARALLEL 119PBGA

供应商型号品牌批号封装库存备注价格
IDT, Integrated Device Technol
21+
100-VFBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
询价
IDT, Integrated Device Technol
21+
119-PBGA(14x22)
56200
一级代理/放心采购
询价
IDT
20+
BGA-119
1001
就找我吧!--邀您体验愉快问购元件!
询价
IDT, Integrated Device Techno
2022+
119-PBGA(14x22)
7300
原装现货
询价
Renesas Electronics America In
24+
119-BGA
9350
独立分销商,公司只做原装,诚心经营,免费试样正品保证
询价
IDT
21+
QFN
5
原装现货假一赔十
询价
IDT
22+
QFN
32350
原装正品 假一罚十 公司现货
询价
IDT
21+
QFN
50000
全新原装正品现货,支持订货
询价
IDT/Integrated Device Technolo
21+
QFN
5
优势代理渠道,原装正品,可全系列订货开增值税票
询价
IDT
22+
QFN
25000
原装现货,价格优惠,假一罚十
询价
更多71V35761S166BGG供应商 更新时间2024-5-24 9:12:00