Silicon-Power-Z-Diodes (non-planar technology)

Silicon-Power-Z-Diodes (non-planar technology) • Maximum power dissipation 12.5 W • Nominal Z-voltage 10 200 V • Metal case DO-4 • Weight approx. 5.5 g • Standard polarity: Cathode to s

文件：112.48 Kbytes 页数：2 Pages

DIOTEC

德欧泰克

Silicon-Power-Z-Diodes (non-planar technology)

Silicon-Power-Z-Diodes (non-planar technology) • Maximum power dissipation 12.5 W • Nominal Z-voltage 10 200 V • Metal case DO-4 • Weight approx. 5.5 g • Standard polarity: Cathode to s

文件：114.6 Kbytes 页数：2 Pages

DIOTEC

德欧泰克

Silicon Power Z Diodes

Silicon Power Z Diodes • Maximum power dissipation 12.5 W • Nominal Z-voltage 3.9…200 V • Metal case DO-4 • Weight approx. 5.5 g • Standard polarity: Cathode to stud / Gewinde • Index R: Anode to

文件：166.88 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SILICON POWER ZENER DIODE

Features 2 Watt Power Dissipation Zener Voltages from 11V - 200V Graded per International E24 Standard

文件：63.81 Kbytes 页数：3 Pages

DIODES

美台半导体

ZENER DIODES

FEATURES ♦ Silicon Power Zener Diodes ♦ For use in stabilizing and clipping circuits with high power rating ♦ The Zener voltages are graded according to the international E 24 standard. Smaller voltage tolerances are available upon request.

文件：364.73 Kbytes 页数：7 Pages

GE

Silicon-Power-Z-Diodes (non-planar technology)

Maximum power dissipation 2 W Nominal Z-voltage ñ Nominale Z-Spannung 1 200 V Plastic case DO-41 Weight approx. ñ Gewicht ca. 0.4 g Plastic material has UL classification 94V-0 S

文件：111.83 Kbytes 页数：2 Pages

DIOTEC

德欧泰克