Silicon-Power-Z-Diodes (non-planar technology)

Silicon-Power-Z-Diodes (non-planar technology) • Maximum power dissipation 12.5 W • Nominal Z-voltage 10 200 V • Metal case DO-4 • Weight approx. 5.5 g • Standard polarity: Cathode to s

文件：112.48 Kbytes 页数：2 Pages

DIOTEC

德欧泰克

Silicon-Power-Z-Diodes (non-planar technology)

Silicon-Power-Z-Diodes (non-planar technology) • Maximum power dissipation 12.5 W • Nominal Z-voltage 10 200 V • Metal case DO-4 • Weight approx. 5.5 g • Standard polarity: Cathode to s

文件：114.6 Kbytes 页数：2 Pages

DIOTEC

德欧泰克

Silicon Power Z Diodes

Silicon Power Z Diodes • Maximum power dissipation 12.5 W • Nominal Z-voltage 3.9…200 V • Metal case DO-4 • Weight approx. 5.5 g • Standard polarity: Cathode to stud / Gewinde • Index R: Anode to

文件：166.88 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SMD

minicircuits

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GC957

Mini-circuits

上传：兆亿微波(北京)科技有限公司