FDI030N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=136A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.2mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchm

FDI030N06

N-ChannelPowerTrench짰MOSFET60V,193A,3.2mW

FDMS030N06B

N-ChannelPowerTrench짰MOSFET60V,100A,3m?

FDP030N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=195A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.1mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

FDP030N06

N-ChannelPowerTrench짰MOSFET60V,193A,3.2m?

FDP030N06B

N-ChannelPowerTrench짰MOSFET60V,195A,3.1m

G030N06M

N-ChannelEnhancementModePowerMOSFET

Description TheG030N06Musesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G030N06T

N-ChannelEnhancementModePowerMOSFET

Description TheG030N06Tusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

NTMFD030N06C

MOSFET-Power,DualN-Channel,DUALSO8FL60V,29.7m,19A

NTTFS030N06C

MOSFET-Power,SingleN-Channel,8FL60V,29.7m,19A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications •PowerTools,BatteryOperatedVacuum