丝印：ZH*；Package：SOT-23；20 V, 3 A PNP low VCEsat (BISS) transistor

DESCRIPTION PNP low VCEsat transistor in a SOT23 plastic package. NPN complement: PBSS4320T. FEATURES • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capability • High collector current gain • Improved efficiency due to reduced hea

文件：85.63 Kbytes 页数：10 Pages

PHI

飞利浦

丝印：ZH*；Package：SOT-23；20 V, 3 A PNP low VCEsat (BISS) transistor

DESCRIPTION PNP low VCEsat transistor in a SOT23 plastic package. NPN complement: PBSS4320T. FEATURES • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capability • High collector current gain • Improved efficiency due to reduced hea

文件：178.49 Kbytes 页数：10 Pages

恩XP

丝印：ZH*；Package：SOT-23；PNP low VCEsat (BISS) transistor 20 V, 3 A

文件：178.49 Kbytes 页数：10 Pages

PHI

飞利浦