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零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
FRS9230R	文件：49.7 Kbytes Page：6 Pages	4A,-200V,1.32Ohm,RadHard,P-ChannelPowerMOSFETs Description IntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessrangi	Intersil Intersil Corporation	Intersil
FSL9230D	文件：46.11 Kbytes Page：8 Pages	3A,-200V,1.50Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	Intersil Intersil Corporation	Intersil
FSL9230R	文件：46.11 Kbytes Page：8 Pages	3A,-200V,1.50Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	Intersil Intersil Corporation	Intersil
FSS9230D	文件：45.22 Kbytes Page：8 Pages	4A,-200V,1.60Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	Intersil Intersil Corporation	Intersil
FSS9230R	文件：45.22 Kbytes Page：8 Pages	4A,-200V,1.60Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	Intersil Intersil Corporation	Intersil
GFC9230	文件：117.76 Kbytes Page：1 Pages	PChannelPowerMOSFET	GSG Gunter Seniconductor GmbH.	GSG
IRF9230	文件：22.19 Kbytes Page：2 Pages	P-CHANNELPOWERMOSFET	SEME-LAB Seme LAB	SEME-LAB
IRF9230	文件：149.8 Kbytes Page：7 Pages	TRANSISTORSP-CHANNEL(Vdss=-200V,Rds(on)=0.80ohm,Id=-6.5A) ProductSummary TheHEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorrever	IRF International Rectifier	IRF
IRF9230	文件：72.62 Kbytes Page：7 Pages	-5.5Aand-6.5A,-150Vand-200V,0.8and1.2Ohm,P-ChannelPowerMOSFETs Description ThesedevicesareP-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedfor	Intersil Intersil Corporation	Intersil
IRF9230	文件：508.31 Kbytes Page：12 Pages	P-CHANNELPOWERMOSFETS FEATURES •LowRDS(on) •Improvedinductiveruggedness •Fsatswitchingtimes •Ruggedpolysilicongatecellstructure •Lowinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability	SamsungSamsung semiconductor 三星三星半导体	Samsung

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供应商	型号	品牌	批号	封装	库存	备注	价格
贸泽芯城（深圳）电子科技有限公司	ZBYS5101	TDK/东电化	23+	SMD-4	11200	原厂授权一级代理、全球订货优势渠道、可提供一站式BO	询价
深圳市得捷芯城科技有限公司	ZBYS5101	TDK/东电化	24+	NA/	4150	原厂直销,现货供应,账期支持!	询价
深圳市一线半导体有限公司	ZBYS5101-2PT	TDK	24+	DO-214	16700	新进库存/原装	询价
深圳市昌和盛利电子有限公司	ZBYS5101-2PT	TDK	23+	SMD	12379		询价
深圳市凌旭科技有限公司	ZBYS5101-2PT	TDK	2016+	SMD	3000	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市卓越微芯电子有限公司	ZBYS5101-2PT	TDK	2020+	SMD	1931	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市佳鑫美电子科技有限公司	ZBYS5101-2PT	TDK	24+	SOT	2700	全新原装自家现货优势!	询价
深圳市振宏微科技有限公司	ZBYS5101-2PT	TDK	23+	SMD	9868	专做原装正品,假一罚百!	询价
深圳市华斯顿科技有限公司	ZBYS5101-2PT	TDK	25+23+	Sod-6	31754	绝对原装正品全新进口深圳现货	询价
深圳市宝芯创电子有限公司	ZBYS5101-2PT	TDK	03+	SMD	6000	原厂原装仓库现货,欢迎咨询	询价

更多ZBY9230T供应商更新时间2025-7-24 16:32:00

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