| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
P-CHANNELPOWERMOSFETS FEATURES •LowRDS(on) •Improvedinductiveruggedness •Fsatswitchingtimes •Ruggedpolysilicongatecellstructure •Lowinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
-19A,-100V,0.200Ohm,P-ChannelPowerMOSFET -19A,-100V,0.200Ohm,P-ChannelPowerMOSFET TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.Allofthesepow | Intersil Intersil Corporation | Intersil | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=-18A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.2Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
POWERMOSFETTHRU-HOLE(TO-254AA) HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establishedadvantagesofMOSFETs,s | IRF International Rectifier | IRF | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
POWERMOSFETSURFACEMOUNT(SMD-1) HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establishedadvantagesofMOSFETs,s | IRF International Rectifier | IRF | ||
POWERMOSFETN-CHANNEL(BVdss=-100V,Rds(on)=0.20ohm,Id=-18A) HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establishedadvantagesofMOSFETs,s | IRF International Rectifier | IRF | ||
SimpleDriveRequirements | IRF International Rectifier | IRF |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TDK/东电化 |
23+ |
SMD-4 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
TDK/东电化 |
24+ |
NA/ |
4150 |
原厂直销,现货供应,账期支持! |
询价 | ||
TDK |
24+ |
DO-214 |
16700 |
新进库存/原装 |
询价 | ||
TDK |
23+ |
SMD |
12379 |
询价 | |||
TDK |
2016+ |
SMD |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
TDK |
2020+ |
SMD |
1931 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
TDK |
24+ |
SOT |
2700 |
全新原装自家现货优势! |
询价 | ||
TDK |
23+ |
SMD |
9868 |
专做原装正品,假一罚百! |
询价 | ||
TDK |
25+23+ |
Sod-6 |
31754 |
绝对原装正品全新进口深圳现货 |
询价 | ||
TDK |
03+ |
SMD |
6000 |
原厂原装仓库现货,欢迎咨询 |
询价 |
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