ZPY110B

SiliconPowerZ-Diodes

SiliconPowerZ-Diodes(non-planartechnology) •Maximumpowerdissipation1.3W •NominalZ-voltage10...200V •PlasticcaseDO-41 •Weightapprox.0.4g •PlasticmaterialhasULclassification94V-0 •St

ZS110

1WATTSURFACEMOUNTZENERDIODE

FEATURES ●PLASTICPACKAGEHASUNDERWRITERSLABORATORY FLAMMABILITYCLASSIFICATION94V-0 ●LOWZENERIMPEDANCE ●EXCELLENTCLAMPINGCAPABILITY MECHANICALDATA ●CASE：MOLDEDPLASTIC ●TERMINALS：SOLDERPLATED ●POLARITY：INDICATEDBYCATHODEBAND ●WEIGHT：0.10GRAMS

ZS110-LFR

1WATTSURFACEMOUNTZENERDIODE

ZS-CCV-110

NewCharacterizedControlValveWeatherShield

ZVNL110A

N-CHANNELENHANCEMENTMODEVERTICALDMOSFET

FEATURES *100VoltVDS *RDS(on)=3Ω *Lowthresholdvoltage

ZVNL110A

N-CHANNELENHANCEMENTMODEVERTICALDMOSFET

FEATURES *100VoltVDS *RDS(on)=3Ω *Lowthresholdvoltage

ZVNL110G

SOT223N-CHANNELENHANCEMENTMODELOWTHRESHOLDVERTICALDMOSFET

Description ThisnewgenerationMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits •LowOn-Resistance •LowInputCapacitance •FastSwitchi

ZVNL110G

N-CHANNELENHANCEMENTMODELOWTHRESHOLDVERTICALDMOSFET

FEATURES *LOWRDS(ON)-3Ω

ZVNL110GTA

N-Channel100-V(D-S)MOSFET

ZX110

Silicon-Power-Z-Diodes(non-planartechnology)

Silicon-Power-Z-Diodes(non-planartechnology) •Maximumpowerdissipation12.5W •NominalZ-voltage10...200V •MetalcaseDO-4 •Weightapprox.5.5g •Standardpolarity:Cathodetos