Silicon N-channel MOS (U-MOS-H)

1. Applications • Automotive • Motor Drivers • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 3.4 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 100 V) (5) Enhancement mode:

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Power MOSFET (N-ch single 60V

• AEC-Q101 qualified\n• Low drain-source on-resistance: RDS(ON)= 3.4 m (typ.)(VGS = 10 V)\n• Enhancement mode: Vth = 2.5 to 3.5 V(VDS = 10 V, ID = 1.0 mA);

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MOSFETs Silicon N-channel MOS

Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers Features (1) High-speed switching (2) Small gate charge : QSW = 21 nC (typ.) (3) Small output charge : Qoss = 74 nC (typ.) (4) Low drain-source on-resistance : RDS(ON) =3.3 mΩ (typ.)(VGS = 10 V )

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Silicon N-channel MOS (U-MOS-H)

1. Applications • Automotive • Motor Drivers • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 3.4 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 100 V) (5) Enhancement mode:

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