丝印：K4H；Package：SOP；MOSFETs Silicon N-channel MOS

Applications • Automotive • Motor Drivers • Switching Voltage Regulators Features (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 0.95 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) (5) Enhancement mode: Vth =

文件：597.43 Kbytes 页数：10 Pages

TOSHIBA

东芝

N-Channel MOSFET

FEATURES ·Drain Current -ID=120A@ TC=25℃ ·Drain Source Voltage -VDSS=840V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.14mΩ(Max)@VGS= 10V APPLICATIONS ·Solar Inverters ·Motor drive ·DC-DC converter ·power switch and solenoid drive

文件：388.27 Kbytes 页数：3 Pages

ISC

无锡固电

Power MOSFET (N-ch single 30V

Application ScopeDC-DC Converters / Automotive / Motor Drivers / Load Switches\nPolarityN-ch\nGenerationU-MOSⅨ-H\nInternal ConnectionSingle\nAEC-Q101Qualified\nRoHS Compatible Product(s) (#)Available

Toshiba

东芝

Silicon N-channel MOS (U-MOS-H)

1. Applications • Automotive • Motor Drivers • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 0.95 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) (5) Enhancement mode:

文件：571.24 Kbytes 页数：10 Pages

TOSHIBA

东芝

Silicon N-channel MOS (U-MOS-H)

1. Applications • Automotive • Motor Drivers • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 0.95 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) (5) Enhancement mode:

文件：641.69 Kbytes 页数：12 Pages

TOSHIBA

东芝