Silicon N-channel MOS (U-MOS-H)

1. Applications • Automotive • Motor Drivers • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 0.95 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) (5) Enhancement mode:

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TOSHIBA

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Power MOSFET (N-ch single 30V VDSS 60V)

Application Scope：DC-DC Converters / Automotive / Motor Drivers / Load Switches\nPolarity：N-ch\nGeneration：U-MOSⅨ-H\nAEC-Q101：Conform\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID 120 A \nPower Dissipation PD 132 W \nDrain-Source voltage VDSS 40 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

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Silicon N-channel MOS (U-MOS-H)

1. Applications • Automotive • Motor Drivers • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 0.95 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) (5) Enhancement mode:

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N-Channel MOSFET

FEATURES ·Drain Current -ID=120A@ TC=25℃ ·Drain Source Voltage -VDSS=840V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.14mΩ(Max)@VGS= 10V APPLICATIONS ·Solar Inverters ·Motor drive ·DC-DC converter ·power switch and solenoid drive

文件：388.27 Kbytes 页数：3 Pages

ISC

无锡固电

MOSFETs Silicon N-channel MOS

Applications • Automotive • Motor Drivers • Switching Voltage Regulators Features (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 0.95 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) (5) Enhancement mode: Vth =

文件：597.43 Kbytes 页数：10 Pages

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东芝