首页 >XNA19N60T>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-CHANNELSILICONPOWERMOSFETFeatures | FujiFuji Electric 富士电机富士电机株式会社 | Fuji | ||
N-CHANNELSILICONPOWERMOSFET | FujiFuji Electric 富士电机富士电机株式会社 | Fuji | ||
N-CHANNELSILICONPOWERMOSFET | FujiFuji Electric 富士电机富士电机株式会社 | Fuji | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-CHANNELSILICONPOWERMOSFET | FujiFuji Electric 富士电机富士电机株式会社 | Fuji | ||
N-CHANNELSILICONPOWERMOSFET | FujiFuji Electric 富士电机富士电机株式会社 | Fuji | ||
N-CHANNELSILICONPOWERMOSFET | FujiFuji Electric 富士电机富士电机株式会社 | Fuji | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=18.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.38Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=11.2A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.38Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
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