APM9430KC-TR

N-ChannelEnhancementModeMOSFET

Features •20V/4A, RDS(ON)=40mΩ(typ.)@VGS=4.5V RDS(ON)=110mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems.

APM9430KC-TRL

N-ChannelEnhancementModeMOSFET

Features •20V/4A, RDS(ON)=40mΩ(typ.)@VGS=4.5V RDS(ON)=110mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems.

APM9430KC-TU

N-ChannelEnhancementModeMOSFET

Features •20V/4A, RDS(ON)=40mΩ(typ.)@VGS=4.5V RDS(ON)=110mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems.

APM9430KC-TU

N-ChannelEnhancementModeMOSFET

Features •20V/4A, RDS(ON)=40mΩ(typ.)@VGS=4.5V RDS(ON)=110mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems.

APM9430KC-TUL

N-ChannelEnhancementModeMOSFET

Features •20V/4A, RDS(ON)=40mΩ(typ.)@VGS=4.5V RDS(ON)=110mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems.

B9430

SAWRFfilterWLAN

Features ■Packagesize1.4x1.1x0.4mm3 ■PackagecodeQCS5I ■RoHScompatible ■Approximateweight0.003g ■PackageforSurfaceMountTechnology(SMT) ■Ni,gold-platedterminals ■ElectrostaticSensitiveDevice(ESD) Application ■Low-lossRFfilterforWLAN ■Unbalancedtounbalan

CDE9430WH

94SeriesFlangedCommsAndNetworkEnclosure

Productoverview Flangedlowprofileanddeepprofileplastic housingswithremovableendpanels.Idealfor surfacemountedcommunicationequipment suchasWi-Firouters. •StylishlydesignedABSplasticcasewith doubledetachablepanels •Flangedsidesforsurfaceorwallmounting •

CEM9430

P-ChannelEnhancementModeMOSFET

FEATURES ●-20V,-5.8A,RDS(ON)=50mΩ@VGS=-10V.-2A,RDS(ON)=90mΩ@VGS=-4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●SurfaceMountPackage.

CEM9430A

P-ChannelEnhancementModeMOSFET

FEATURES ●-20V,-5.8A,RDS(ON)=50mΩ@VGS=-10V.-2A,RDS(ON)=90mΩ@VGS=-4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●SurfaceMountPackage.

ELM9430B-N

CMOSPFMstep-upDC/DCconverter