AD9430SLASHPCB-CMOS

12-Bit,170MSPS3.3VA/DConverter

GENERALDESCRIPTION TheAD9430isa12-bit,monolithic,samplinganalog-to-digitalconverter(ADC)optimizedforhighperformance,lowpower,andeaseofuse.Theproductoperatesuptoa210MSPSconversionrateandisoptimizedforoutstandingdynamicperformanceinwidebandcarrierandbroadba

ADE9430

HighPerformance,PolyphaseEnergy,andClassSPowerQualityMonitoringIC

FEATURES ►7highperformance,24-bitΣ-ΔADCs ►101dBSNRat8kSPSwithPGA=1 ►Wideinputvoltagerange:±1V,707mVrmsfullscaleatgain=1 ►Differentialinputs ►±25ppm/°Cmaximumchanneldrift(includingADC,internal VREF,PGAdrift)enabling10000:1dynamicinputrange,Class

ADE9430ACPZ

HighPerformance,PolyphaseEnergy,andClassSPowerQualityMonitoringIC

FEATURES ►7highperformance,24-bitΣ-ΔADCs ►101dBSNRat8kSPSwithPGA=1 ►Wideinputvoltagerange:±1V,707mVrmsfullscaleatgain=1 ►Differentialinputs ►±25ppm/°Cmaximumchanneldrift(includingADC,internal VREF,PGAdrift)enabling10000:1dynamicinputrange,Class

ADE9430ACPZ-RL

HighPerformance,PolyphaseEnergy,andClassSPowerQualityMonitoringIC

FEATURES ►7highperformance,24-bitΣ-ΔADCs ►101dBSNRat8kSPSwithPGA=1 ►Wideinputvoltagerange:±1V,707mVrmsfullscaleatgain=1 ►Differentialinputs ►±25ppm/°Cmaximumchanneldrift(includingADC,internal VREF,PGAdrift)enabling10000:1dynamicinputrange,Class

AP9430AGYT-HF

SimpleDriveRequirement,SmallSize&LowerProfile

AP9430GH-HF

LowOn-resistance,SimpleDriveRequirement

AP9430GYT-HF

SimpleDriveRequirement,SmallSize&LowerProfile

APM9430

N-ChannelEnhancementModeMOSFET

Features •20V/4A, RDS(ON)=40mΩ(typ.)@VGS=4.5V RDS(ON)=110mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems.

APM9430K

N-ChannelEnhancementModeMOSFET

Features •20V/4A, RDS(ON)=40mΩ(typ.)@VGS=4.5V RDS(ON)=110mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems.

APM9430KC-TR

N-ChannelEnhancementModeMOSFET

Features •20V/4A, RDS(ON)=40mΩ(typ.)@VGS=4.5V RDS(ON)=110mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems.