CDE9430WH

94 Series Flanged Comms And Network Enclosure

Productoverview Flangedlowprofileanddeepprofileplastic housingswithremovableendpanels.Idealfor surfacemountedcommunicationequipment suchasWi-Firouters. •StylishlydesignedABSplasticcasewith doubledetachablepanels •Flangedsidesforsurfaceorwallmounting •

CEM9430

P-ChannelEnhancementModeMOSFET

FEATURES ●-20V,-5.8A,RDS(ON)=50mΩ@VGS=-10V.-2A,RDS(ON)=90mΩ@VGS=-4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●SurfaceMountPackage.

CEM9430A

P-ChannelEnhancementModeMOSFET

FEATURES ●-20V,-5.8A,RDS(ON)=50mΩ@VGS=-10V.-2A,RDS(ON)=90mΩ@VGS=-4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●SurfaceMountPackage.

ELM9430B-N

CMOSPFMstep-upDC/DCconverter

ELM9430B-S

CMOSPFMstep-upDC/DCconverter

EVAL-ADE9430ARDZ

HighPerformance,PolyphaseEnergy,andClassSPowerQualityMonitoringIC

FEATURES ►7highperformance,24-bitΣ-ΔADCs ►101dBSNRat8kSPSwithPGA=1 ►Wideinputvoltagerange:±1V,707mVrmsfullscaleatgain=1 ►Differentialinputs ►±25ppm/°Cmaximumchanneldrift(includingADC,internal VREF,PGAdrift)enabling10000:1dynamicinputrange,Class

GAPM9430

MinisizeofDiscretesemiconductorelements

M9430

MODULARIN-GRADELUMINAIRESINGLELENS

NDS9430

30VP-ChannelPowerTrenchMOSFET

NDS9430

SingleP-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingNationalsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith