丝印：X23；Package：SOT-416；Low VCE (sat) Digital transistors (with built-in resistors)

文件：63.73 Kbytes 页数：2 Pages

ROHM

罗姆

丝印：X23；Package：SOT-416；Low VCE (sat) Digital transistors with built-in resistors)

文件：160.52 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：X23；Package：SOT-416；500mA/12V Low V Digital transistors

文件：1.09492 Mbytes 页数：10 Pages

ROHM

罗姆

丝印：X23；Package：VMT3；500mA/12V Low V Digital transistors

文件：1.09492 Mbytes 页数：10 Pages

ROHM

罗姆

丝印：X23；Package：VMT3；Low VCE (sat) Digital transistors (with built-in resistors)

文件：63.73 Kbytes 页数：2 Pages

ROHM

罗姆

丝印：X23；Package：VMT3；Low VCE (sat) Digital transistors with built-in resistors)

文件：160.52 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：X2360；Package：TO-92；Low voltage fast-switching PNP power transistor

Features ■ Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast-switching speed Applications ■ Emergency lighting ■ LED ■ Voltage regulation ■ Relay drive Description The device is a PNP transistor manufactured using new “PB-HDC” (power bipolar hig

文件：158.16 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

丝印：X23C；Package：VSSOP；ADC102S101 2 Channel, 500 ksps to 1 Msps, 10-Bit A/D Converter

1FEATURES 2• Specified Over a Range of Sample Rates • Two Input Channels • Variable Power Management • Single Power Supply with 2.7V - 5.25V Range KEY SPECIFICATIONS • DNL: + 0.26/−0.16 LSB (Typ) • INL: + 0.4/−0.1 LSB (Typ) • SNR: 61.7 dB (Typ) • Power Consumption: – 3V Supply: 3.9 mW

文件：955.14 Kbytes 页数：29 Pages

TI

德州仪器

丝印：X23C；Package：VSSOP；ADC102S101 2 Channel, 500 ksps to 1 Msps, 10-Bit A/D Converter

1FEATURES 2• Specified Over a Range of Sample Rates • Two Input Channels • Variable Power Management • Single Power Supply with 2.7V - 5.25V Range KEY SPECIFICATIONS • DNL: + 0.26/−0.16 LSB (Typ) • INL: + 0.4/−0.1 LSB (Typ) • SNR: 61.7 dB (Typ) • Power Consumption: – 3V Supply: 3.9 mW

文件：955.14 Kbytes 页数：29 Pages

TI

德州仪器

X200 SERIES (CMOS) STANDARD SPECFITIONS

文件：67.35 Kbytes 页数：1 Pages

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