丝印：X04；Package：SOT-563；30V N-Channel Enhancement Mode MOSFET – ESD Protected

Features  RDS(ON) , VGS@4,5V, ID@0.6A

文件：401.91 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：X04；Package：SOT-563；30V N-Channel Enhancement Mode MOSFET – ESD Protected

Features  RDS(ON) , VGS@4,5V, ID@0.6A

文件：401.91 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：X04；Package：TSMT6；Low frequency amplifier

文件：69.36 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：X04；Package：TUMT6；Low frequency amplifier (30V, 2A)

文件：75.41 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：X04C；Package：VSSOP；ADC082S051 2 Channel, 200 ksps to 500 ksps, 8-Bit A/D Converter

1FEATURES 2• Specified Over a Range of Sample Rates • Two Input Channels • Variable Power Management • Single Power Supply with 2.7V - 5.25V Range KEY SPECIFICATIONS • DNL: ±0.09 LSB (Typ) • INL: + 0.12/−0.062 LSB (Typ) • SNR: 49.5 dB (Typ) • Power Consumption: – 3V Supply: 2.2 mW (Typ

文件：909.72 Kbytes 页数：29 Pages

TI

德州仪器

丝印：X04C；Package：VSSOP；ADC082S051 2 Channel, 200 ksps to 500 ksps, 8-Bit A/D Converter

1FEATURES 2• Specified Over a Range of Sample Rates • Two Input Channels • Variable Power Management • Single Power Supply with 2.7V - 5.25V Range KEY SPECIFICATIONS • DNL: ±0.09 LSB (Typ) • INL: + 0.12/−0.062 LSB (Typ) • SNR: 49.5 dB (Typ) • Power Consumption: – 3V Supply: 2.2 mW (Typ

文件：909.72 Kbytes 页数：29 Pages

TI

德州仪器

丝印：X04C；Package：VSSOP；ADC082S051 2 Channel, 200 ksps to 500 ksps, 8-Bit A/D Converter

1FEATURES 2• Specified Over a Range of Sample Rates • Two Input Channels • Variable Power Management • Single Power Supply with 2.7V - 5.25V Range KEY SPECIFICATIONS • DNL: ±0.09 LSB (Typ) • INL: + 0.12/−0.062 LSB (Typ) • SNR: 49.5 dB (Typ) • Power Consumption: – 3V Supply: 2.2 mW (Typ

文件：909.72 Kbytes 页数：29 Pages

TI

德州仪器

丝印：X04C；Package：VSSOP；ADC082S051 2 Channel, 200 ksps to 500 ksps, 8-Bit A/D Converter

1FEATURES 2• Specified Over a Range of Sample Rates • Two Input Channels • Variable Power Management • Single Power Supply with 2.7V - 5.25V Range KEY SPECIFICATIONS • DNL: ±0.09 LSB (Typ) • INL: + 0.12/−0.062 LSB (Typ) • SNR: 49.5 dB (Typ) • Power Consumption: – 3V Supply: 2.2 mW (Typ

文件：909.72 Kbytes 页数：29 Pages

TI

德州仪器

丝印：X0402MB；Package：DPAK；4 A Sensitive gate SCR in DPAK package

Features • 4 A Triac • Sensitive SCR: IGT = 200 μA • VDRM / VRRM = 600 V and VDSM / VRSM = 750 V • 125 °C maximum junction temperature Tj • DPAK SMD package • Halogen-free molding, lead-free plating • ECOPACK2 compliant Application • Actuators • Ignitors • Inrush current limiting circui

文件：697.22 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

丝印：X0402MH；Package：IPAK；4 A Sensitive gate SCR in IPAK package

Features • 4 A SCR • Sensitive SCR: IGT = 200 μA • VDRM / VRRM = 600 V and VDSM / VRSM = 750 V • 125 °C maximum junction temperature Tj • IPAK package • Halogen-free molding, lead-free plating • ECOPACK2 compliant Applications • Actuators • Ignitors • Inrush current limiting circuits

文件：605.84 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体