丝印：X08；Package：SOT-563；20V N-Channel Enhancement Mode MOSFET

Features  Low Voltage Drive (1.2V).  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.  ESD Protected  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard

文件：345.9 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：X08；Package：SOT-563；20V N-Channel Enhancement Mode MOSFET

Features  Low Voltage Drive (1.2V).  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.  ESD Protected  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard

文件：345.9 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：X08；Package：SOT-563；20V N-Channel Enhancement Mode MOSFET

Features  Low Voltage Drive (1.2V)  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.  ESD Protected  AEC-Q101 qualified  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC61249 standard

文件：349.68 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：X08；Package：SOT-26；General purpose amplification (30V, 1A)

文件：69.06 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：X08；Package：TUMT6；General purpose amplification (30V, 1A)

文件：75.34 Kbytes 页数：3 Pages

ROHM

罗姆