MOSFET

WPMTEK

维攀微

650V N-Channel Multi-EPI Super-JMOSFET

Features 40A, 650V, RDS(on) =82mΩ@VGS = 10 V Low gate charge(typ. Qg =52nC) Ultra high ruggedness Fast switching 100% avalanche tested Improved dv/dt capability

文件：1.39618 Mbytes 页数：7 Pages

WPMTEK

维攀科技

Field Stop IGBT 650 V, 40 A

General Description Using novel field stop IGBT technology, onsemi’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential. Featu

文件：373.25 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

650V, 40A Field Stop IGBT

General Description Using novel field stop IGBT technology, Fairchild®’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Voltage: VCE

文件：729.1 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

650V, 40A Field Stop IGBT

General Description Using novel field stop IGBT technology, Fairchild®’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Voltage: VCE

文件：729.1 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体