MMJT9435

BipolarPowerTransistors

BipolarPowerTransistors PNPSilicon •Collector–EmitterSustainingVoltage—VCEO(sus) =30Vdc(Min)@IC=10mAdc •HighDCCurrentGain—hFE =140(Min)@IC=1.2Adc =125(Min)@IC=3.0Adc •LowCollector–EmitterSat

MSP9435W

-30V(D-S)P-ChannelEnhancementModePowerMOSFET

WT9435M

SurfaceMountP-ChannelEnhancementModeMOSFET

Features: *SuperhighdensecelldesignforlowRDS(ON) RDS(ON)

WTC9435

P-ChannelEnhancementModePowerMOSFET

WTD9435

SurfaceMountP-ChannelEnhancementModePOWERMOSFET

WTK9435

SurfaceMountP-ChannelEnhancementModeMOSFET

WTK9435

P-Channel30-V(D-S)MOSFET

WTN9435

SurfaceMountP-ChannelEnhancementModePowerMOSFET