10 W, 5 GHz, GaN on SiC General Purpose Power Amplifier

GaN on SiC HEMT technologyOperating frequency : up to 5 GHzP3dB : up to 10 WSupply voltage : up to 50 VPb-free and RoHS compliant • GaN on SiC HEMT technology\n• Operating frequency : up to 5 GHz\n• P3dB : up to 10 W\n• Supply voltage : up to 50 V\n• Pb-free and RoHS compliant;

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10 W, 5 GHz, GaN on SiC General Purpose Power Amplifier

Description The WSGPA01 is a GaN on SiC Discrete General Purpose Amplifier (GPA) designed for applications up to 5 GHz. The device operates from supply voltages up to 50 V and can achieve a P3dB of 10 W. It is housed in a 3 mm X 4 mm DFN package. While it is designed for communications infrastru

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10 W, 5 GHz, GaN on SiC General Purpose Power Amplifier

Description The WSGPA01 is a GaN on SiC Discrete General Purpose Amplifier (GPA) designed for applications up to 5 GHz. The device operates from supply voltages up to 50 V and can achieve a P3dB of 10 W. It is housed in a 3 mm X 4 mm DFN package. While it is designed for communications infrastru

文件：712.89 Kbytes 页数：7 Pages

WOLFSPEED

10 W, 5 GHz, GaN on SiC General Purpose Power Amplifier

Description The WSGPA01 is a GaN on SiC Discrete General Purpose Amplifier (GPA) designed for applications up to 5 GHz. The device operates from supply voltages up to 50 V and can achieve a P3dB of 10 W. It is housed in a 3 mm X 4 mm DFN package. While it is designed for communications infrastru

文件：712.89 Kbytes 页数：7 Pages

WOLFSPEED

10 W, 5 GHz, GaN on SiC General Purpose Power Amplifier

GaN on SiC HEMT technologyOperating frequency : up to 5 GHzP3dB : up to 10 WSupply voltage : up to 50 VPb-free and RoHS compliant • GaN on SiC HEMT technology\n• Operating frequency : up to 5 GHz\n• P3dB : up to 10 W\n• Supply voltage : up to 50 V\n• Pb-free and RoHS compliant;

MACOM

10 W; 5 GHz; GaN on SiC General Purpose Power Amplifier

The WSGPA01 is a GaN on SiC Discrete General Purpose Amplifier (GPA) designed for applications up to 5 GHz. The device operates from supply voltages up to 50 V and can achieve a P3dB of 10 W. It is housed in a 3 mm X 4 mm DFN package. While it is designed for communications infrastructure applicatio ·GaN on SiC HEMT technology\n·Operating frequency : up to 5 GHz\n·P3dB : up to 10 W\n·Supply voltage : up to 50 V\n·Pb-free and RoHS compliant;

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