NP50P04SDG

ProductScoutAutomotive

NP50P04SLG

MOSFIELDEFFECTTRANSISTOR

Description TheNP50P04SLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance ⎯RDS(on)1=9.6mΩMAX.(VGS=−10V,ID=−25A) ⎯RDS(on)2=15mΩMAX.(VGS=−4.5V,ID=−25A) •Lowinputcapacitance

NP50P04SLG

P-Channel40V(D-S)MOSFET

FEATURES •TrenchFET®powerMOSFET •Packagewithlowthermalresistance •100RgandUIStested

PJD50P04

40VP-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@-10V,ID@-10A

PJD50P04-AU

40VP-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@-10V,ID@-10A

SQD50P04

AutomotiveP-Channel40V(D-S)175째CMOSFET

SQM50P04

AutomotiveP-Channel40V(D-S)175째CMOSFET

SUD50P04

P-ChannelEnhancementModeMOSFET

Features Vos=-40VID=-50A ROS(ON)

UTT50P04

-40V,-60AP-CHANNELPOWERMOSFET

YFW50P04AD

-40VP-CHANNELENHANCEMENTMODEMOSFET

Application Batteryprotection Loadswitch Uninterruptiblepowersupply