高压场效应管（100-800V）

Winsok

微硕半导体

TMOS POWER FET 20 AMPERES 200 VOLTS

The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced TMOS E–FET is designed to withstand high

文件：258.709 Kbytes 页数：10 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET 20 AMPERES 200 VOLTS RDS(on) = 0.16 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low v

文件：203.09 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET 20 AMPERES 200 VOLTS RDS(on) = 0.16 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low v

文件：203.09 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉