MTP20N20E中文资料PDF规格书
MTP20N20E规格书详情
TMOS E-FET Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
产品属性
- 型号:
MTP20N20E
- 制造商:
ON Semiconductor
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ONS |
127 |
N/A |
80 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ONS |
2016+ |
N/A |
6528 |
只做进口原装现货!假一赔十! |
询价 | ||
ON/安森美 |
18+ |
TO-220 |
12500 |
全新原装正品,本司专业配单,大单小单都配 |
询价 | ||
IR |
24+ |
TO 220 |
161090 |
明嘉莱只做原装正品现货 |
询价 | ||
ON |
2020+ |
TO-220 |
35000 |
100%进口原装正品公司现货库存 |
询价 | ||
ONS |
21+ |
N/A |
5091 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ONS |
23+ |
NA |
6000 |
原装正品,支持实单 |
询价 | ||
VBSEMI/台湾微碧 |
23+ |
TO220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ON/安森美 |
22+ |
TO-220 |
19865 |
询价 | |||
ON |
23+ |
TO-220 |
6893 |
询价 |