CEP6036

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,135A,RDS(ON)=4.6mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package.

CEP6036L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,144A,RDS(ON)=4.0mW@VGS=10V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=5.5mW@VGS=4.5V.

CEU6036L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,118A,RDS(ON)=4.0mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=5.5mW@VGS=4.5V.

D6036

SIL2Switch/ProximityRelay-OutRepeater

FEATURES SIL2/SC3 Highvoltage/currentratingrelayoutput Fieldopenandshortcircuitdetection In-fieldprogrammabilitybyDIPSwitch Threeportisolation,Input/Output/Supply HighDensity,twochannelsperunit

D6036D

SIL2Switch/ProximityRelay-OutRepeater

FEATURES SIL2/SC3 Highvoltage/currentratingrelayoutput Fieldopenandshortcircuitdetection In-fieldprogrammabilitybyDIPSwitch Threeportisolation,Input/Output/Supply HighDensity,twochannelsperunit

D6036S

SIL2Switch/ProximityRelay-OutRepeater

FEATURES SIL2/SC3 Highvoltage/currentratingrelayoutput Fieldopenandshortcircuitdetection In-fieldprogrammabilitybyDIPSwitch Threeportisolation,Input/Output/Supply HighDensity,twochannelsperunit

EP6036

DATASUBJECTTOCHANGEWITHOUTNOTLCE

EP6036

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EP6036

InnerPanelsEPSeries

EP6036

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