ADR425BR

UltraprecisionLowNoise,2.048V/2.500V/3.00V/5.00VXFETVoltageReferences

GENERALDESCRIPTION TheADR42xareaseriesofultraprecision,secondgenerationeXtraimplantedjunctionFET(XFET)voltagereferencesfeaturinglownoise,highaccuracy,andexcellentlong-termstabilityinSOICandMSOPfootprints. FEATURES Lownoise(0.1Hzto10Hz) ADR42

ADR425BR

Ultraprecision,LowNoise,2.048V/2.500V/3.00V/5.00VXFET짰VoltageReferences

ADR425BRZ

Ultraprecision,LowNoise,2.048V/2.500V/3.00V/5.00VXFET짰VoltageReferences

AE425PJB

OutgassingCompliantPowerInductors

AMITX-BE-G-RX425BB

Mini-ITXEmbeddedBoardwithAMDEmbeddedR-SeriesAPU

AMITX-BE-G-RX425BB-LVDS

Mini-ITXEmbeddedBoardwithAMDEmbeddedR-SeriesAPU

AOD425

P-ChannelEnhancementModeFieldEffectTransistor

P-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOD425usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andultra-lowlowgatechargewitha25Vgaterating.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.ThedeviceisESDprotecte

AOD425

P-Channel30-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •LoadSwitch •BatterySwitch

AOD425

P-ChannelEnhancementModeFieldEffectTransistor

AOD425

iscP-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=-50A@TC=25℃ •DrainSourceVoltage- :VDSS=-30V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=17mΩ(Max) •100avalanchetested •MinimumLot-to-