AE425PJB

Outgassing Compliant Power Inductors

AMITX-BE-G-RX425BB

Mini-ITXEmbeddedBoardwithAMDEmbeddedR-SeriesAPU

AMITX-BE-G-RX425BB-LVDS

Mini-ITXEmbeddedBoardwithAMDEmbeddedR-SeriesAPU

AOD425

P-ChannelEnhancementModeFieldEffectTransistor

P-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOD425usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andultra-lowlowgatechargewitha25Vgaterating.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.ThedeviceisESDprotecte

AOD425

P-Channel30-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •LoadSwitch •BatterySwitch

AOD425

P-ChannelEnhancementModeFieldEffectTransistor

AOD425

iscP-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=-50A@TC=25℃ •DrainSourceVoltage- :VDSS=-30V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=17mΩ(Max) •100avalanchetested •MinimumLot-to-

AOD425A

P-Channel30-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •LoadSwitch •BatterySwitch

AOI425

P-Channel40V(D-S)MOSFET

AOI425

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=-55A@TC=25℃ ·DrainSourceVoltage :VDSS=-40V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=10mΩ(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC