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型号	下载订购	功能描述	制造商上传企业	LOGO
WS1A3640	文件：422.7 Kbytes Page：7 Pages	GaN on SiC Power Amplifier Module for 5G Description The WS1A3640 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC HEMT transistors with matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The WS1A3640 has been designed to operate from 3300 MHz t 文件：422.7 Kbytes 页数：7 Pages	WOLFSPEED	WOLFSPEED
WS1A3640	文件：300 bytes Page：1 Pages	39.5 dBm GaN-on-SiC Power Amplifier Module; 3300-3800 MHz The WS1A3640 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating GaN-on-SiC HEMT transistors with advanced matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The PAM has been designed to operate from 3300 MHz to 3800 MHz; from supply ·Gate bias supplies for main and peaking sub-amplifiers from either side of the device\n·GaN-on-SiC technology\n·Integrated harmonic terminations\n·Pb-free and RoHS compliant\n·Recommended driver is the WSGPA01;	MACOM	MACOM
WS1A3640V2-01	文件：422.7 Kbytes Page：7 Pages	GaN on SiC Power Amplifier Module for 5G Description The WS1A3640 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC HEMT transistors with matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The WS1A3640 has been designed to operate from 3300 MHz t 文件：422.7 Kbytes 页数：7 Pages	WOLFSPEED	WOLFSPEED
WS1A3640V2-02	文件：422.7 Kbytes Page：7 Pages	GaN on SiC Power Amplifier Module for 5G Description The WS1A3640 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC HEMT transistors with matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The WS1A3640 has been designed to operate from 3300 MHz t 文件：422.7 Kbytes 页数：7 Pages	WOLFSPEED	WOLFSPEED
WS1A3640V2-03	文件：422.7 Kbytes Page：7 Pages	GaN on SiC Power Amplifier Module for 5G Description The WS1A3640 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC HEMT transistors with matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The WS1A3640 has been designed to operate from 3300 MHz t 文件：422.7 Kbytes 页数：7 Pages	WOLFSPEED	WOLFSPEED
WS1A3640V2-08	文件：422.7 Kbytes Page：7 Pages	GaN on SiC Power Amplifier Module for 5G Description The WS1A3640 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC HEMT transistors with matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The WS1A3640 has been designed to operate from 3300 MHz t 文件：422.7 Kbytes 页数：7 Pages	WOLFSPEED	WOLFSPEED
WS1A3640-V2-R00A	文件：422.7 Kbytes Page：7 Pages	GaN on SiC Power Amplifier Module for 5G Description The WS1A3640 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC HEMT transistors with matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The WS1A3640 has been designed to operate from 3300 MHz t 文件：422.7 Kbytes 页数：7 Pages	WOLFSPEED	WOLFSPEED
WS1A3640-V2-R1	文件：422.7 Kbytes Page：7 Pages	GaN on SiC Power Amplifier Module for 5G Description The WS1A3640 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC HEMT transistors with matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The WS1A3640 has been designed to operate from 3300 MHz t 文件：422.7 Kbytes 页数：7 Pages	WOLFSPEED	WOLFSPEED
WS1A3640-V2-R3K	文件：422.7 Kbytes Page：7 Pages	GaN on SiC Power Amplifier Module for 5G Description The WS1A3640 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC HEMT transistors with matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The WS1A3640 has been designed to operate from 3300 MHz t 文件：422.7 Kbytes 页数：7 Pages	WOLFSPEED	WOLFSPEED
WS1A3640-V1-R3K	文件：300 bytes Page：1 Pages	39.5 dBm GaN-on-SiC Power Amplifier Module; 3300-3800 MHz The WS1A3640 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating GaN-on-SiC HEMT transistors with advanced matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The PAM has been designed to operate from 3300 MHz to 3800 MHz; from supply ·Gate bias supplies for main and peaking sub-amplifiers from either side of the device\n·GaN-on-SiC technology\n·Integrated harmonic terminations\n·Pb-free and RoHS compliant\n·Recommended driver is the WSGPA01\n;	MACOM	MACOM

技术参数

Min Frequency (MHz)：
3300
Max Frequency(MHz)：
3800
P3dB Output Power(W)：
60
Gain(dB)：
13.5
Efficiency(%)：
52
Operating Voltage(V)：
48
Package Category：
Surface Mount
Form：
Packaged Discrete Transistor
Technology：
GaN-on-SiC

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市达恩科技有限公司	WS1A3640	MACOM	24+		5000	原装军类可排单	询价
深圳市河锋鑫科技有限公司	WS1A476M6L007	SAMWH	2022+	DIP	51200	原厂代理终端免费提供样品	询价
深圳市易讯博科技有限公司	WS1A47R0J	Bourns	22+	NA	5889	加我QQ或微信咨询更多详细信息,	询价
深圳市高捷芯城科技有限公司	WS1A47R0J	BOURNS	24+	插件	7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
现代芯城（深圳）科技有限公司	WS1A47R0J		24+	N/A	70000	一级代理-主营优势-实惠价格-不悔选择	询价
深圳市赛尔通科技有限公司	WS1C		23+		65480		询价
深圳市鹏顺微电子科技有限公司	WS1M1500J	Bourns	2022+	原厂原包装	6800	全新原装支持表配单中国著名电子元器件独立分销	询价
贸泽芯城（深圳）电子科技有限公司	WS1M15R0J	BOURNS/伯恩斯	23+		11200	原厂授权一级代理、全球订货优势渠道、可提供一站式BO	询价
深圳市赛特兴科技有限公司	WS1M32-20G	WHITE	QQ咨询	QFP	112	全新原装研究所指定供货商	询价
深圳市纳立科技有限公司	WS1M32-20G3M	white	三年内		1983	只做原装正品	询价

更多WS1A3640供应商更新时间2025-10-4 14:15:00

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