WS1A3640-V1-R3K中文资料39.5 dBm GaN-on-SiC Power Amplifier Module; 3300-3800 MHz数据手册MACOM规格书

描述 Description

The WS1A3640 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating GaN-on-SiC HEMT transistors with advanced matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The PAM has been designed to operate from 3300 MHz to 3800 MHz; from supply voltages up to 50 V; at average output power levels of 8 to 10 W with crest-factor reduced and digitally pre-distorted LTE and 5G NR signals with instantaneous bandwidths of 200 MHz or more. The device is housed in a 6 mm X 6 mm land grid array (LGA) package.

特性 Features

·Gate bias supplies for main and peaking sub-amplifiers from either side of the device
·GaN-on-SiC technology
·Integrated harmonic terminations
·Pb-free and RoHS compliant
·Recommended driver is the WSGPA01

应用 Application

·Multi-standard Cellular Power Amplifiers