39.5 dBm GaN-on-SiC Power Amplifier Module; 3300-3800 MHz

The WS1A3640 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating GaN-on-SiC HEMT transistors with advanced matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The PAM has been designed to operate from 3300 MHz to 3800 MHz; from supply ·Gate bias supplies for main and peaking sub-amplifiers from either side of the device\n·GaN-on-SiC technology\n·Integrated harmonic terminations\n·Pb-free and RoHS compliant\n·Recommended driver is the WSGPA01\n;

MACOM

WINSEMI
SOP8

WinsemiShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司

上传：深圳市纳立科技有限公司

MICROCHIP
DIP32

Microchip

微芯科技

上传：深圳市东来宝电子科技有限公司

WINSEMI
SOT23-3

WinsemiShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司

上传：深圳市纳立科技有限公司

WS
TO-92

WS

上传：深圳庞田科技有限公司